FinFET-based power simulator for interconnection networks

Chun Yi Lee, Niraj K. Jha

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

Double-gate FETs, specifically FinFETs, are emerging as promising substitutes for bulk CMOS at the 32nm technology node and beyond because of the various obstacles to scaling faced by CMOS, such as short-channel effects, leakage power, and process variations. Another trend in chip multiprocessor design is incorporation of sophisticated on-chip interconnection networks. However, such networks are significant power-consumers. In this article, we address these two trends by presenting a power simulator for FinFET-based on-chip interconnection networks. It estimates both dynamic and leakage power. We present results for various FinFET design styles and temperatures (since leakage power changes drastically with temperature), and show that one FinFET design style may be much superior to another from the power consumption point of view.

Original languageEnglish (US)
Article number1721652
JournalACM Journal on Emerging Technologies in Computing Systems
Volume6
Issue number1
DOIs
StatePublished - Mar 1 2010

All Science Journal Classification (ASJC) codes

  • Software
  • Hardware and Architecture
  • Electrical and Electronic Engineering

Keywords

  • FinFETs
  • Interconnection network
  • Power consumption
  • Power simulator

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