Field-induced resonant tunneling between parallel two-dimensional electron systems

J. P. Eisenstein; L. N. Pfeiffer; K. W. West

doi:10.1063/1.105157

Field-induced resonant tunneling between parallel two-dimensional electron systems

J. P. Eisenstein, L. N. Pfeiffer, K. W. West

Research output: Contribution to journal › Article › peer-review

80 Scopus citations

Abstract

Resonant tunneling between two high-mobility two-dimensional (2D) electron systems in a double quantum well structure has been induced by the action of an external Schottky gate field. Using one 2D electron gas as source and the other as drain, the tunnel conductance between them shows a strong resonance when the gate field aligns the ground subband edges of the two quantum wells.

Original language	English (US)
Pages (from-to)	1497-1499
Number of pages	3
Journal	Applied Physics Letters
Volume	58
Issue number	14
DOIs	https://doi.org/10.1063/1.105157
State	Published - 1991
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.105157

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title = "Field-induced resonant tunneling between parallel two-dimensional electron systems",

abstract = "Resonant tunneling between two high-mobility two-dimensional (2D) electron systems in a double quantum well structure has been induced by the action of an external Schottky gate field. Using one 2D electron gas as source and the other as drain, the tunnel conductance between them shows a strong resonance when the gate field aligns the ground subband edges of the two quantum wells.",

author = "Eisenstein, {J. P.} and Pfeiffer, {L. N.} and West, {K. W.}",

year = "1991",

doi = "10.1063/1.105157",

language = "English (US)",

volume = "58",

pages = "1497--1499",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

number = "14",

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T1 - Field-induced resonant tunneling between parallel two-dimensional electron systems

AU - Eisenstein, J. P.

AU - Pfeiffer, L. N.

AU - West, K. W.

PY - 1991

Y1 - 1991

N2 - Resonant tunneling between two high-mobility two-dimensional (2D) electron systems in a double quantum well structure has been induced by the action of an external Schottky gate field. Using one 2D electron gas as source and the other as drain, the tunnel conductance between them shows a strong resonance when the gate field aligns the ground subband edges of the two quantum wells.

AB - Resonant tunneling between two high-mobility two-dimensional (2D) electron systems in a double quantum well structure has been induced by the action of an external Schottky gate field. Using one 2D electron gas as source and the other as drain, the tunnel conductance between them shows a strong resonance when the gate field aligns the ground subband edges of the two quantum wells.

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U2 - 10.1063/1.105157

DO - 10.1063/1.105157

M3 - Article

AN - SCOPUS:36449005749

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SP - 1497

EP - 1499

JO - Applied Physics Letters

JF - Applied Physics Letters

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Field-induced resonant tunneling between parallel two-dimensional electron systems

Abstract

All Science Journal Classification (ASJC) codes

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