Field-effect persistent photoconductivity in AlAs and GaAs quantum wells with AlxGa1-xAs barriers

E. P. De Poortere; Y. P. Shkolnikov; M. Shayegan

Field-effect persistent photoconductivity in AlAs and GaAs quantum wells with Al_xGa_1-xAs barriers

E. P. De Poortere, Y. P. Shkolnikov, M. Shayegan

Research output: Contribution to journal › Article › peer-review

Abstract

We report a persistent increase or decrease in the two-dimensional electron density of AlAs or GaAs quantum wells flanked by Al_xGa_1-xAs barriers, brought about by illuminating the samples at T ∼ 4 K, while simultaneously applying a voltage bias between a back gate and the two-dimensional electron gas. Control of the final carrier density is achieved by tuning the back gate bias during illumination. Furthermore, the strength of the persistent photoconductivity depends on the Al mole fraction in the back Al_xGal_1-xAs barrier, and is largest at x ≅ 0.4.

Original language	English (US)
Article number	153303
Pages (from-to)	1533031-1533034
Number of pages	4
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	67
Issue number	15
State	Published - Apr 2003

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Cite this

@article{780eaa1a26fa4f1b9ba0f6c8dcd97a75,

title = "Field-effect persistent photoconductivity in AlAs and GaAs quantum wells with AlxGa1-xAs barriers",

abstract = "We report a persistent increase or decrease in the two-dimensional electron density of AlAs or GaAs quantum wells flanked by AlxGa1-xAs barriers, brought about by illuminating the samples at T ∼ 4 K, while simultaneously applying a voltage bias between a back gate and the two-dimensional electron gas. Control of the final carrier density is achieved by tuning the back gate bias during illumination. Furthermore, the strength of the persistent photoconductivity depends on the Al mole fraction in the back AlxGal1-xAs barrier, and is largest at x ≅ 0.4.",

author = "{De Poortere}, {E. P.} and Shkolnikov, {Y. P.} and M. Shayegan",

year = "2003",

month = apr,

language = "English (US)",

volume = "67",

pages = "1533031--1533034",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "0163-1829",

publisher = "American Physical Society",

number = "15",

}

TY - JOUR

T1 - Field-effect persistent photoconductivity in AlAs and GaAs quantum wells with AlxGa1-xAs barriers

AU - De Poortere, E. P.

AU - Shkolnikov, Y. P.

AU - Shayegan, M.

PY - 2003/4

Y1 - 2003/4

N2 - We report a persistent increase or decrease in the two-dimensional electron density of AlAs or GaAs quantum wells flanked by AlxGa1-xAs barriers, brought about by illuminating the samples at T ∼ 4 K, while simultaneously applying a voltage bias between a back gate and the two-dimensional electron gas. Control of the final carrier density is achieved by tuning the back gate bias during illumination. Furthermore, the strength of the persistent photoconductivity depends on the Al mole fraction in the back AlxGal1-xAs barrier, and is largest at x ≅ 0.4.

AB - We report a persistent increase or decrease in the two-dimensional electron density of AlAs or GaAs quantum wells flanked by AlxGa1-xAs barriers, brought about by illuminating the samples at T ∼ 4 K, while simultaneously applying a voltage bias between a back gate and the two-dimensional electron gas. Control of the final carrier density is achieved by tuning the back gate bias during illumination. Furthermore, the strength of the persistent photoconductivity depends on the Al mole fraction in the back AlxGal1-xAs barrier, and is largest at x ≅ 0.4.

UR - http://www.scopus.com/inward/record.url?scp=0038509054&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0038509054&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0038509054

SN - 0163-1829

VL - 67

SP - 1533031

EP - 1533034

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 15

M1 - 153303

ER -

Field-effect persistent photoconductivity in AlAs and GaAs quantum wells with Al_xGa_1-xAs barriers

Abstract

All Science Journal Classification (ASJC) codes

Other files and links

Fingerprint

Cite this