Field-effect persistent photoconductivity in AlAs and GaAs quantum wells with (formula presented) barriers

E. P. De Poortere; Y. P. Shkolnikov; M. Shayegan

doi:10.1103/PhysRevB.67.153303

Field-effect persistent photoconductivity in AlAs and GaAs quantum wells with (formula presented) barriers

E. P. De Poortere, Y. P. Shkolnikov, M. Shayegan

Research output: Contribution to journal › Article › peer-review

Abstract

We report a persistent increase or decrease in the two-dimensional electron density of AlAs or GaAs quantum wells flanked by (formula presented) barriers, brought about by illuminating the samples at (formula presented) while simultaneously applying a voltage bias between a back gate and the two-dimensional electron gas. Control of the final carrier density is achieved by tuning the back gate bias during illumination. Furthermore, the strength of the persistent photoconductivity depends on the Al mole fraction in the back (formula presented) barrier, and is largest at (formula presented).

Original language	English (US)
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	67
Issue number	15
DOIs	https://doi.org/10.1103/PhysRevB.67.153303
State	Published - Apr 28 2003

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.67.153303

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title = "Field-effect persistent photoconductivity in AlAs and GaAs quantum wells with (formula presented) barriers",

abstract = "We report a persistent increase or decrease in the two-dimensional electron density of AlAs or GaAs quantum wells flanked by (formula presented) barriers, brought about by illuminating the samples at (formula presented) while simultaneously applying a voltage bias between a back gate and the two-dimensional electron gas. Control of the final carrier density is achieved by tuning the back gate bias during illumination. Furthermore, the strength of the persistent photoconductivity depends on the Al mole fraction in the back (formula presented) barrier, and is largest at (formula presented).",

author = "{De Poortere}, {E. P.} and Shkolnikov, {Y. P.} and M. Shayegan",

year = "2003",

month = apr,

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doi = "10.1103/PhysRevB.67.153303",

language = "English (US)",

volume = "67",

journal = "Physical Review B - Condensed Matter and Materials Physics",

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T1 - Field-effect persistent photoconductivity in AlAs and GaAs quantum wells with (formula presented) barriers

AU - De Poortere, E. P.

AU - Shkolnikov, Y. P.

AU - Shayegan, M.

PY - 2003/4/28

Y1 - 2003/4/28

N2 - We report a persistent increase or decrease in the two-dimensional electron density of AlAs or GaAs quantum wells flanked by (formula presented) barriers, brought about by illuminating the samples at (formula presented) while simultaneously applying a voltage bias between a back gate and the two-dimensional electron gas. Control of the final carrier density is achieved by tuning the back gate bias during illumination. Furthermore, the strength of the persistent photoconductivity depends on the Al mole fraction in the back (formula presented) barrier, and is largest at (formula presented).

AB - We report a persistent increase or decrease in the two-dimensional electron density of AlAs or GaAs quantum wells flanked by (formula presented) barriers, brought about by illuminating the samples at (formula presented) while simultaneously applying a voltage bias between a back gate and the two-dimensional electron gas. Control of the final carrier density is achieved by tuning the back gate bias during illumination. Furthermore, the strength of the persistent photoconductivity depends on the Al mole fraction in the back (formula presented) barrier, and is largest at (formula presented).

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DO - 10.1103/PhysRevB.67.153303

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JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 15

ER -

Field-effect persistent photoconductivity in AlAs and GaAs quantum wells with (formula presented) barriers

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