Field-effect persistent photoconductivity in AlAs and GaAs quantum wells with (formula presented) barriers

E. P. De Poortere, Y. P. Shkolnikov, Mansour Shayegan

Research output: Contribution to journalArticle

Abstract

We report a persistent increase or decrease in the two-dimensional electron density of AlAs or GaAs quantum wells flanked by (formula presented) barriers, brought about by illuminating the samples at (formula presented) while simultaneously applying a voltage bias between a back gate and the two-dimensional electron gas. Control of the final carrier density is achieved by tuning the back gate bias during illumination. Furthermore, the strength of the persistent photoconductivity depends on the Al mole fraction in the back (formula presented) barrier, and is largest at (formula presented).

Original languageEnglish (US)
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume67
Issue number15
DOIs
StatePublished - Apr 28 2003

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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