We report a persistent increase or decrease in the two-dimensional electron density of AlAs or GaAs quantum wells flanked by (formula presented) barriers, brought about by illuminating the samples at (formula presented) while simultaneously applying a voltage bias between a back gate and the two-dimensional electron gas. Control of the final carrier density is achieved by tuning the back gate bias during illumination. Furthermore, the strength of the persistent photoconductivity depends on the Al mole fraction in the back (formula presented) barrier, and is largest at (formula presented).
|Original language||English (US)|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - Apr 28 2003|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics