Field-effect mobility of amorphous silicon thin-film transistors under strain

H. Gleskova, P. I. Hsu, Z. Xi, J. C. Sturm, Z. Suo, S. Wagner

Research output: Contribution to journalArticlepeer-review

55 Scopus citations

Abstract

We applied strain ranging from 1% compressive to ∼0.3% tensile to a-Si:H TFTs on polyimide foils by bending them inward or outward, or by stretching them in a microstrain tester. We also applied strain to a-Si:H TFTs by deforming a flat substrate into a spherical dome. In each case, compression lowered and tension raised the on-current and hence the electron field-effect mobility. We conclude that compressive strain broadens both the valence and conduction band tails of the a-Si:H channel material, and thus reduces the effective electron mobility. We show that the mobility can be used as an indicator of local mechanical strain.

Original languageEnglish (US)
Pages (from-to)732-735
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume338-340
Issue number1 SPEC. ISS.
DOIs
StatePublished - Jun 15 2004

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

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