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Far-infrared studies of extremely high mobility gated GaAs/AlGaAs structures in magnetic fields

  • R. J. Heron
  • , R. A. Lewis
  • , R. G. Clark
  • , R. P. Starrett
  • , B. E. Kane
  • , G. R. Facer
  • , N. B. Lumpkin
  • , D. G. Rickel
  • , L. N. Pfeiffer
  • , K. W. West

Research output: Contribution to journalArticlepeer-review

Abstract

Extremely narrow cyclotron resonance linewidths are reported in GaAs-based heterostructures measured using double-modulated far-infrared photoconductivity. At low carrier densities and temperatures full widths at half maximum as small as 6 mT are observed.

Original languageEnglish (US)
Pages (from-to)481-485
Number of pages5
JournalPhysica B: Condensed Matter
Volume256-258
DOIs
StatePublished - Dec 2 1998
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Keywords

  • Far-infrared
  • Heterostructures
  • Magnetospectroscopy

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