Fabry-Perot Optical Intensity Modulator at 1.3 μm in Silicon

X. Xiao; J. C. Sturm; K. K. Goel; P. V. Schwartz

doi:10.1109/68.79763

Fabry-Perot Optical Intensity Modulator at 1.3 μm in Silicon

X. Xiao, J. C. Sturm, K. K. Goel, P. V. Schwartz

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

We report a new type of all silicon surface-normal optical intensity modulator at 1.3 μm, which can be easily butt-coupled with a cleaved single mode fiber. The device utilizes free carrier effects in silicon to achieve phase modulation, and a built-in Fabry-Perot cavity to convert the phase modulation into intensity modulation. We have demonstrated 10% modulation depth with driving current density as low as 6 X 10³ A/cm², which is an order of magnitude smaller than the best result ever reported for silicon optical modulators. The measured 3 dB bandwidth is 40 MHz.

Original language	English (US)
Pages (from-to)	230-231
Number of pages	2
Journal	IEEE Photonics Technology Letters
Volume	3
Issue number	3
DOIs	https://doi.org/10.1109/68.79763
State	Published - Mar 1991

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/68.79763

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title = "Fabry-Perot Optical Intensity Modulator at 1.3 μm in Silicon",

abstract = "We report a new type of all silicon surface-normal optical intensity modulator at 1.3 μm, which can be easily butt-coupled with a cleaved single mode fiber. The device utilizes free carrier effects in silicon to achieve phase modulation, and a built-in Fabry-Perot cavity to convert the phase modulation into intensity modulation. We have demonstrated 10% modulation depth with driving current density as low as 6 X 103 A/cm2, which is an order of magnitude smaller than the best result ever reported for silicon optical modulators. The measured 3 dB bandwidth is 40 MHz.",

author = "X. Xiao and Sturm, {J. C.} and Goel, {K. K.} and Schwartz, {P. V.}",

note = "Funding Information: Manuscript received November 1, 1990. This work was supported by the National Science Foundation and the Princeton Opto-Electronic Materials Center (POEM). The authors are with the Department of Electrical Engineering, Princeton University, Princeton, NJ 08544. IEEE Log Number 9143127.",

year = "1991",

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doi = "10.1109/68.79763",

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AU - Xiao, X.

AU - Sturm, J. C.

AU - Goel, K. K.

AU - Schwartz, P. V.

N1 - Funding Information: Manuscript received November 1, 1990. This work was supported by the National Science Foundation and the Princeton Opto-Electronic Materials Center (POEM). The authors are with the Department of Electrical Engineering, Princeton University, Princeton, NJ 08544. IEEE Log Number 9143127.

PY - 1991/3

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N2 - We report a new type of all silicon surface-normal optical intensity modulator at 1.3 μm, which can be easily butt-coupled with a cleaved single mode fiber. The device utilizes free carrier effects in silicon to achieve phase modulation, and a built-in Fabry-Perot cavity to convert the phase modulation into intensity modulation. We have demonstrated 10% modulation depth with driving current density as low as 6 X 103 A/cm2, which is an order of magnitude smaller than the best result ever reported for silicon optical modulators. The measured 3 dB bandwidth is 40 MHz.

AB - We report a new type of all silicon surface-normal optical intensity modulator at 1.3 μm, which can be easily butt-coupled with a cleaved single mode fiber. The device utilizes free carrier effects in silicon to achieve phase modulation, and a built-in Fabry-Perot cavity to convert the phase modulation into intensity modulation. We have demonstrated 10% modulation depth with driving current density as low as 6 X 103 A/cm2, which is an order of magnitude smaller than the best result ever reported for silicon optical modulators. The measured 3 dB bandwidth is 40 MHz.

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Fabry-Perot Optical Intensity Modulator at 1.3 μm in Silicon

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