Fabry-Perot Optical Intensity Modulator at 1.3 μm in Silicon

X. Xiao, J. C. Sturm, K. K. Goel, P. V. Schwartz

Research output: Contribution to journalArticle

25 Scopus citations

Abstract

We report a new type of all silicon surface-normal optical intensity modulator at 1.3 μm, which can be easily butt-coupled with a cleaved single mode fiber. The device utilizes free carrier effects in silicon to achieve phase modulation, and a built-in Fabry-Perot cavity to convert the phase modulation into intensity modulation. We have demonstrated 10% modulation depth with driving current density as low as 6 X 103 A/cm2, which is an order of magnitude smaller than the best result ever reported for silicon optical modulators. The measured 3 dB bandwidth is 40 MHz.

Original languageEnglish (US)
Pages (from-to)230-231
Number of pages2
JournalIEEE Photonics Technology Letters
Volume3
Issue number3
DOIs
StatePublished - Mar 1991

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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