Fabrication of submicron devices on the (011) cleave surface of a cleaved-edge-overgrowth GaAs/AlGaAs crystal

A. M. Chang; Hao Zhang; L. N. Pfeiffer; K. W. West

doi:10.1063/1.3694052

Fabrication of submicron devices on the (011) cleave surface of a cleaved-edge-overgrowth GaAs/AlGaAs crystal

A. M. Chang, Hao Zhang, L. N. Pfeiffer, K. W. West

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We describe the fabrication of submicron devices on the (011) cleave surface of a GaAs heterostructure crystal, in which this surface is extremely narrow. Special purpose devices are produced, which take advantage of the unique characteristics of cleaved-edge-overgrowth. The successful fabrication relies on understanding the surface tension of the electron beam polymethyl methacrylate resist, the workable degree of variation in resist thickness, and on gluing the crystal onto a backing substrate to increase structural strength. We demonstrate functional gate-controlled quantum point contact constrictions placed 9 m from one edge of the cleave surface.

Original language	English (US)
Article number	123106
Journal	Applied Physics Letters
Volume	100
Issue number	12
DOIs	https://doi.org/10.1063/1.3694052
State	Published - Mar 19 2012
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3694052

Cite this

@article{14fa478c63344f82b7e3dff2c220f8c4,

title = "Fabrication of submicron devices on the (011) cleave surface of a cleaved-edge-overgrowth GaAs/AlGaAs crystal",

abstract = "We describe the fabrication of submicron devices on the (011) cleave surface of a GaAs heterostructure crystal, in which this surface is extremely narrow. Special purpose devices are produced, which take advantage of the unique characteristics of cleaved-edge-overgrowth. The successful fabrication relies on understanding the surface tension of the electron beam polymethyl methacrylate resist, the workable degree of variation in resist thickness, and on gluing the crystal onto a backing substrate to increase structural strength. We demonstrate functional gate-controlled quantum point contact constrictions placed 9 m from one edge of the cleave surface.",

author = "Chang, \{A. M.\} and Hao Zhang and Pfeiffer, \{L. N.\} and West, \{K. W.\}",

year = "2012",

month = mar,

day = "19",

doi = "10.1063/1.3694052",

language = "English (US)",

volume = "100",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "12",

}

TY - JOUR

T1 - Fabrication of submicron devices on the (011) cleave surface of a cleaved-edge-overgrowth GaAs/AlGaAs crystal

AU - Chang, A. M.

AU - Zhang, Hao

AU - Pfeiffer, L. N.

AU - West, K. W.

PY - 2012/3/19

Y1 - 2012/3/19

N2 - We describe the fabrication of submicron devices on the (011) cleave surface of a GaAs heterostructure crystal, in which this surface is extremely narrow. Special purpose devices are produced, which take advantage of the unique characteristics of cleaved-edge-overgrowth. The successful fabrication relies on understanding the surface tension of the electron beam polymethyl methacrylate resist, the workable degree of variation in resist thickness, and on gluing the crystal onto a backing substrate to increase structural strength. We demonstrate functional gate-controlled quantum point contact constrictions placed 9 m from one edge of the cleave surface.

AB - We describe the fabrication of submicron devices on the (011) cleave surface of a GaAs heterostructure crystal, in which this surface is extremely narrow. Special purpose devices are produced, which take advantage of the unique characteristics of cleaved-edge-overgrowth. The successful fabrication relies on understanding the surface tension of the electron beam polymethyl methacrylate resist, the workable degree of variation in resist thickness, and on gluing the crystal onto a backing substrate to increase structural strength. We demonstrate functional gate-controlled quantum point contact constrictions placed 9 m from one edge of the cleave surface.

UR - https://www.scopus.com/pages/publications/84859530322

UR - https://www.scopus.com/inward/citedby.url?scp=84859530322&partnerID=8YFLogxK

U2 - 10.1063/1.3694052

DO - 10.1063/1.3694052

M3 - Article

AN - SCOPUS:84859530322

SN - 0003-6951

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

M1 - 123106

ER -

Fabrication of submicron devices on the (011) cleave surface of a cleaved-edge-overgrowth GaAs/AlGaAs crystal

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this