Fabrication of submicron devices on the (011) cleave surface of a cleaved-edge-overgrowth GaAs/AlGaAs crystal

A. M. Chang; Hao Zhang; L. N. Pfeiffer; K. W. West

doi:10.1063/1.3694052

Fabrication of submicron devices on the (011) cleave surface of a cleaved-edge-overgrowth GaAs/AlGaAs crystal

A. M. Chang, Hao Zhang, L. N. Pfeiffer, K. W. West

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We describe the fabrication of submicron devices on the (011) cleave surface of a GaAs heterostructure crystal, in which this surface is extremely narrow. Special purpose devices are produced, which take advantage of the unique characteristics of cleaved-edge-overgrowth. The successful fabrication relies on understanding the surface tension of the electron beam polymethyl methacrylate resist, the workable degree of variation in resist thickness, and on gluing the crystal onto a backing substrate to increase structural strength. We demonstrate functional gate-controlled quantum point contact constrictions placed 9 m from one edge of the cleave surface.

Original language	English (US)
Article number	123106
Journal	Applied Physics Letters
Volume	100
Issue number	12
DOIs	https://doi.org/10.1063/1.3694052
State	Published - Mar 19 2012
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3694052

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AU - Chang, A. M.

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AU - Pfeiffer, L. N.

AU - West, K. W.

PY - 2012/3/19

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N2 - We describe the fabrication of submicron devices on the (011) cleave surface of a GaAs heterostructure crystal, in which this surface is extremely narrow. Special purpose devices are produced, which take advantage of the unique characteristics of cleaved-edge-overgrowth. The successful fabrication relies on understanding the surface tension of the electron beam polymethyl methacrylate resist, the workable degree of variation in resist thickness, and on gluing the crystal onto a backing substrate to increase structural strength. We demonstrate functional gate-controlled quantum point contact constrictions placed 9 m from one edge of the cleave surface.

AB - We describe the fabrication of submicron devices on the (011) cleave surface of a GaAs heterostructure crystal, in which this surface is extremely narrow. Special purpose devices are produced, which take advantage of the unique characteristics of cleaved-edge-overgrowth. The successful fabrication relies on understanding the surface tension of the electron beam polymethyl methacrylate resist, the workable degree of variation in resist thickness, and on gluing the crystal onto a backing substrate to increase structural strength. We demonstrate functional gate-controlled quantum point contact constrictions placed 9 m from one edge of the cleave surface.

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Fabrication of submicron devices on the (011) cleave surface of a cleaved-edge-overgrowth GaAs/AlGaAs crystal

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