TY - JOUR
T1 - Fabrication of quasi-three-dimensional electron systems and superlattices in wide parabolic wells
AU - Santos, M.
AU - Jo, J.
AU - Shayegan, M.
AU - Lanzillotto, A. M.
N1 - Funding Information:
We thank H.D. Drew, K. Karrai, and D.C. Tsui for fruitful discussions and Y.W. Suen and L.W. Engel for assistance with the low-temperature measurements. This work is supported by the National Science Foundation (Grant No. ECS-85-53110 and DMR-89-21073), the US Army Research Office (Contract No. DAALO3-89-K-0036), the New Jersey Commission on Science and Technology, GTE Laboratories Inc., Xerox Corporation, and the Alfred P. Sloan Foundation.
PY - 1991/5/2
Y1 - 1991/5/2
N2 - We report the realization of quasi-three-dimensional electron systems in selectively-doped wide parabolic quantum wells, focusing on a novel superlattice which contains a high-mobility ( ≈ 1.1×105 cm2/V⋯s at 4 K) degenerate electron system. This molecular beam epitaxy grown structure is a wide undoped AlxGa1-xAs well bounded by undoped (spacer) and doped layers of AlyGa1-yAs(y > x) on both sides. The alloy composition in the well is graded in a way that results in a parabolic potential with a sinusoidal modulation superimposed on it. Once transferred into this well, the electrons screen the parabolic potential and an electron system with a modulated charge density profile is obtained. We present self-consistent quantum mechanical calculations of the electronic system and our characterization of the structure by secondary ion mass spectrometry and magnetotransport measurements.
AB - We report the realization of quasi-three-dimensional electron systems in selectively-doped wide parabolic quantum wells, focusing on a novel superlattice which contains a high-mobility ( ≈ 1.1×105 cm2/V⋯s at 4 K) degenerate electron system. This molecular beam epitaxy grown structure is a wide undoped AlxGa1-xAs well bounded by undoped (spacer) and doped layers of AlyGa1-yAs(y > x) on both sides. The alloy composition in the well is graded in a way that results in a parabolic potential with a sinusoidal modulation superimposed on it. Once transferred into this well, the electrons screen the parabolic potential and an electron system with a modulated charge density profile is obtained. We present self-consistent quantum mechanical calculations of the electronic system and our characterization of the structure by secondary ion mass spectrometry and magnetotransport measurements.
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U2 - 10.1016/0022-0248(91)91002-R
DO - 10.1016/0022-0248(91)91002-R
M3 - Article
AN - SCOPUS:0026413341
SN - 0022-0248
VL - 111
SP - 366
EP - 370
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1-4
ER -