We report the realization of quasi-three-dimensional electron systems in selectively-doped wide parabolic quantum wells, focusing on a novel superlattice which contains a high-mobility ( ≈ 1.1×105 cm2/V⋯s at 4 K) degenerate electron system. This molecular beam epitaxy grown structure is a wide undoped AlxGa1-xAs well bounded by undoped (spacer) and doped layers of AlyGa1-yAs(y > x) on both sides. The alloy composition in the well is graded in a way that results in a parabolic potential with a sinusoidal modulation superimposed on it. Once transferred into this well, the electrons screen the parabolic potential and an electron system with a modulated charge density profile is obtained. We present self-consistent quantum mechanical calculations of the electronic system and our characterization of the structure by secondary ion mass spectrometry and magnetotransport measurements.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry