Fabrication of quasi-three-dimensional electron systems and superlattices in wide parabolic wells

M. Santos; J. Jo; M. Shayegan; A. M. Lanzillotto

doi:10.1016/0022-0248(91)91002-R

Fabrication of quasi-three-dimensional electron systems and superlattices in wide parabolic wells

M. Santos, J. Jo, M. Shayegan, A. M. Lanzillotto

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We report the realization of quasi-three-dimensional electron systems in selectively-doped wide parabolic quantum wells, focusing on a novel superlattice which contains a high-mobility ( ≈ 1.1×10⁵ cm²/V⋯s at 4 K) degenerate electron system. This molecular beam epitaxy grown structure is a wide undoped Al_xGa_1-xAs well bounded by undoped (spacer) and doped layers of Al_yGa_1-yAs(y > x) on both sides. The alloy composition in the well is graded in a way that results in a parabolic potential with a sinusoidal modulation superimposed on it. Once transferred into this well, the electrons screen the parabolic potential and an electron system with a modulated charge density profile is obtained. We present self-consistent quantum mechanical calculations of the electronic system and our characterization of the structure by secondary ion mass spectrometry and magnetotransport measurements.

Original language	English (US)
Pages (from-to)	366-370
Number of pages	5
Journal	Journal of Crystal Growth
Volume	111
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(91)91002-R
State	Published - May 2 1991

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/0022-0248(91)91002-R

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title = "Fabrication of quasi-three-dimensional electron systems and superlattices in wide parabolic wells",

abstract = "We report the realization of quasi-three-dimensional electron systems in selectively-doped wide parabolic quantum wells, focusing on a novel superlattice which contains a high-mobility ( ≈ 1.1×105 cm2/V⋯s at 4 K) degenerate electron system. This molecular beam epitaxy grown structure is a wide undoped AlxGa1-xAs well bounded by undoped (spacer) and doped layers of AlyGa1-yAs(y > x) on both sides. The alloy composition in the well is graded in a way that results in a parabolic potential with a sinusoidal modulation superimposed on it. Once transferred into this well, the electrons screen the parabolic potential and an electron system with a modulated charge density profile is obtained. We present self-consistent quantum mechanical calculations of the electronic system and our characterization of the structure by secondary ion mass spectrometry and magnetotransport measurements.",

author = "M. Santos and J. Jo and M. Shayegan and Lanzillotto, {A. M.}",

note = "Funding Information: We thank H.D. Drew, K. Karrai, and D.C. Tsui for fruitful discussions and Y.W. Suen and L.W. Engel for assistance with the low-temperature measurements. This work is supported by the National Science Foundation (Grant No. ECS-85-53110 and DMR-89-21073), the US Army Research Office (Contract No. DAALO3-89-K-0036), the New Jersey Commission on Science and Technology, GTE Laboratories Inc., Xerox Corporation, and the Alfred P. Sloan Foundation.",

year = "1991",

month = may,

day = "2",

doi = "10.1016/0022-0248(91)91002-R",

language = "English (US)",

volume = "111",

pages = "366--370",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Fabrication of quasi-three-dimensional electron systems and superlattices in wide parabolic wells

AU - Santos, M.

AU - Jo, J.

AU - Shayegan, M.

AU - Lanzillotto, A. M.

N1 - Funding Information: We thank H.D. Drew, K. Karrai, and D.C. Tsui for fruitful discussions and Y.W. Suen and L.W. Engel for assistance with the low-temperature measurements. This work is supported by the National Science Foundation (Grant No. ECS-85-53110 and DMR-89-21073), the US Army Research Office (Contract No. DAALO3-89-K-0036), the New Jersey Commission on Science and Technology, GTE Laboratories Inc., Xerox Corporation, and the Alfred P. Sloan Foundation.

PY - 1991/5/2

Y1 - 1991/5/2

N2 - We report the realization of quasi-three-dimensional electron systems in selectively-doped wide parabolic quantum wells, focusing on a novel superlattice which contains a high-mobility ( ≈ 1.1×105 cm2/V⋯s at 4 K) degenerate electron system. This molecular beam epitaxy grown structure is a wide undoped AlxGa1-xAs well bounded by undoped (spacer) and doped layers of AlyGa1-yAs(y > x) on both sides. The alloy composition in the well is graded in a way that results in a parabolic potential with a sinusoidal modulation superimposed on it. Once transferred into this well, the electrons screen the parabolic potential and an electron system with a modulated charge density profile is obtained. We present self-consistent quantum mechanical calculations of the electronic system and our characterization of the structure by secondary ion mass spectrometry and magnetotransport measurements.

AB - We report the realization of quasi-three-dimensional electron systems in selectively-doped wide parabolic quantum wells, focusing on a novel superlattice which contains a high-mobility ( ≈ 1.1×105 cm2/V⋯s at 4 K) degenerate electron system. This molecular beam epitaxy grown structure is a wide undoped AlxGa1-xAs well bounded by undoped (spacer) and doped layers of AlyGa1-yAs(y > x) on both sides. The alloy composition in the well is graded in a way that results in a parabolic potential with a sinusoidal modulation superimposed on it. Once transferred into this well, the electrons screen the parabolic potential and an electron system with a modulated charge density profile is obtained. We present self-consistent quantum mechanical calculations of the electronic system and our characterization of the structure by secondary ion mass spectrometry and magnetotransport measurements.

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JO - Journal of Crystal Growth

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ER -

Fabrication of quasi-three-dimensional electron systems and superlattices in wide parabolic wells

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