Fabrication of patterned Ge_xSi_1-x/Si layers by pulsed laser induced epitaxy

Keyphrases

• Two Dimensional 100%
• Si Layer 100%
• Pulsed Laser Epitaxy 100%
• Pattern-based Approach 50%
• Well-defined 50%
• Laser Processing 50%
• Mass Transport 50%
• Heat Transport 50%
• High-resolution Transmission Electron Microscopy (HRTEM) 50%
• Surface Defects 50%
• Oxides 50%
• Lift-off 50%
• Line Defect 50%
• Distribution Profile 50%
• Selective Growth 50%
• Well-distribution 50%
• Energy Dispersive X-ray 50%

Material Science

• Epitaxy 100%
• Oxide Compound 50%
• High-Resolution Transmission Electron Microscopy 50%
• Surface Defect 50%
• Laser Processing 50%