Fabrication of nanodevices using sub-25 nm imprint lithography

Peter R. Krauss; Preston J. Renstrom; Stephen Y. Chou

Fabrication of nanodevices using sub-25 nm imprint lithography

Peter R. Krauss, Preston J. Renstrom, Stephen Y. Chou

Research output: Contribution to conference › Paper › peer-review

Abstract

Imprint lithography has been used for the first time to fabricate a variety of nanodevices such as MSM photodetectors and Si quantum wire transistors. In device fabrication, the fine features were defined using imprint lithography and the coarse features were defined by optical lithography. For MSM photodetectors, the metal finger width is 100 nm and the spacing between interdigitated fingers is 120 nm. For Si quantum wire transistors, the channel width is 50 nm.

Original language	English (US)
Pages	194-195
Number of pages	2
State	Published - 1996
Externally published	Yes
Event	Proceedings of the 1996 54th Annual Device Research Conference Digest, DRC - Santa Barbara, CA, USA Duration: Jun 24 1996 → Jun 26 1996

Other

Other	Proceedings of the 1996 54th Annual Device Research Conference Digest, DRC
City	Santa Barbara, CA, USA
Period	6/24/96 → 6/26/96

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

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title = "Fabrication of nanodevices using sub-25 nm imprint lithography",

abstract = "Imprint lithography has been used for the first time to fabricate a variety of nanodevices such as MSM photodetectors and Si quantum wire transistors. In device fabrication, the fine features were defined using imprint lithography and the coarse features were defined by optical lithography. For MSM photodetectors, the metal finger width is 100 nm and the spacing between interdigitated fingers is 120 nm. For Si quantum wire transistors, the channel width is 50 nm.",

author = "Krauss, {Peter R.} and Renstrom, {Preston J.} and Chou, {Stephen Y.}",

year = "1996",

language = "English (US)",

pages = "194--195",

note = "Proceedings of the 1996 54th Annual Device Research Conference Digest, DRC ; Conference date: 24-06-1996 Through 26-06-1996",

}

TY - CONF

T1 - Fabrication of nanodevices using sub-25 nm imprint lithography

AU - Krauss, Peter R.

AU - Renstrom, Preston J.

AU - Chou, Stephen Y.

PY - 1996

Y1 - 1996

N2 - Imprint lithography has been used for the first time to fabricate a variety of nanodevices such as MSM photodetectors and Si quantum wire transistors. In device fabrication, the fine features were defined using imprint lithography and the coarse features were defined by optical lithography. For MSM photodetectors, the metal finger width is 100 nm and the spacing between interdigitated fingers is 120 nm. For Si quantum wire transistors, the channel width is 50 nm.

AB - Imprint lithography has been used for the first time to fabricate a variety of nanodevices such as MSM photodetectors and Si quantum wire transistors. In device fabrication, the fine features were defined using imprint lithography and the coarse features were defined by optical lithography. For MSM photodetectors, the metal finger width is 100 nm and the spacing between interdigitated fingers is 120 nm. For Si quantum wire transistors, the channel width is 50 nm.

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UR - http://www.scopus.com/inward/citedby.url?scp=0029701344&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0029701344

SP - 194

EP - 195

T2 - Proceedings of the 1996 54th Annual Device Research Conference Digest, DRC

Y2 - 24 June 1996 through 26 June 1996

ER -

Fabrication of nanodevices using sub-25 nm imprint lithography

Abstract

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All Science Journal Classification (ASJC) codes

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