Fabrication of nanodevices using sub-25 nm imprint lithography

Peter R. Krauss, Preston J. Renstrom, Stephen Y. Chou

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Imprint lithography has been used for the first time to fabricate a variety of nanodevices such as MSM photodetectors and Si quantum wire transistors. In device fabrication, the fine features were defined using imprint lithography and the coarse features were defined by optical lithography. For MSM photodetectors, the metal finger width is 100 nm and the spacing between interdigitated fingers is 120 nm. For Si quantum wire transistors, the channel width is 50 nm.

Original languageEnglish (US)
Title of host publicationAnnual Device Research Conference Digest
PublisherIEEE
Pages194-195
Number of pages2
StatePublished - Jan 1 1996
Externally publishedYes
EventProceedings of the 1996 54th Annual Device Research Conference Digest, DRC - Santa Barbara, CA, USA
Duration: Jun 24 1996Jun 26 1996

Other

OtherProceedings of the 1996 54th Annual Device Research Conference Digest, DRC
CitySanta Barbara, CA, USA
Period6/24/966/26/96

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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