Abstract
A method using two-step process of nanoimprint lithography (NIL) and electromigration was presented to fabricate gold nanocontacts for molecular devices. The NIL process used a silicon dioxide mold with 20 nm wide nanowires of 70 nm height. An anisotropic oxygen plasma reactive ion etch was used to remove the residual polymer. Analysis suggested that the proposed fabrication method offered a fast and effective process for producing large number of nanocontacts.
Original language | English (US) |
---|---|
Pages (from-to) | 665-667 |
Number of pages | 3 |
Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
Volume | 20 |
Issue number | 2 |
DOIs | |
State | Published - Mar 2002 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering