Fabrication of high performance MSM photodetectors on SOI with nanometer-scale scattering buried backside reflectors

Erli Chen; Stephen Y. Chou

doi:10.1117/12.275795

Fabrication of high performance MSM photodetectors on SOI with nanometer-scale scattering buried backside reflectors

Research output: Contribution to journal › Conference article › peer-review

Abstract

We present the fabrication and performance of a metal-semiconductor-metal (MSM) photodetector with high efficiency and high speed. The MSM photodetector is fabricated on a 501 substrate with a 170-nm-thick Si active layer. A scattering backside reflector, consisting of inverted pyramids with 193-nm-long sides and 54.7° slopes, is buried underneath the active layer. This scattering buried backside reflector (SBBR) causes the trapping of light inside the active layer, resulting in an MSM photodetector with a response time of 5.4 ps and responsivity comparable with those on bulk Si at both the visible and infrared.

Original language	English (US)
Pages (from-to)	329-336
Number of pages	8
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3048
DOIs	https://doi.org/10.1117/12.275795
State	Published - Jul 7 1997
Externally published	Yes
Event	Emerging Lithographic Technologies 1997 - Santa Clara, United States Duration: Mar 10 1997 → Mar 14 1997

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Keywords

Backside reflectors
MSM photodetectors
Si-on-insulator

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10.1117/12.275795

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title = "Fabrication of high performance MSM photodetectors on SOI with nanometer-scale scattering buried backside reflectors",

abstract = "We present the fabrication and performance of a metal-semiconductor-metal (MSM) photodetector with high efficiency and high speed. The MSM photodetector is fabricated on a 501 substrate with a 170-nm-thick Si active layer. A scattering backside reflector, consisting of inverted pyramids with 193-nm-long sides and 54.7° slopes, is buried underneath the active layer. This scattering buried backside reflector (SBBR) causes the trapping of light inside the active layer, resulting in an MSM photodetector with a response time of 5.4 ps and responsivity comparable with those on bulk Si at both the visible and infrared.",

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author = "Erli Chen and Chou, {Stephen Y.}",

note = "Publisher Copyright: {\textcopyright} 1994 SPIE.; Emerging Lithographic Technologies 1997 ; Conference date: 10-03-1997 Through 14-03-1997",

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T1 - Fabrication of high performance MSM photodetectors on SOI with nanometer-scale scattering buried backside reflectors

AU - Chen, Erli

AU - Chou, Stephen Y.

PY - 1997/7/7

Y1 - 1997/7/7

N2 - We present the fabrication and performance of a metal-semiconductor-metal (MSM) photodetector with high efficiency and high speed. The MSM photodetector is fabricated on a 501 substrate with a 170-nm-thick Si active layer. A scattering backside reflector, consisting of inverted pyramids with 193-nm-long sides and 54.7° slopes, is buried underneath the active layer. This scattering buried backside reflector (SBBR) causes the trapping of light inside the active layer, resulting in an MSM photodetector with a response time of 5.4 ps and responsivity comparable with those on bulk Si at both the visible and infrared.

AB - We present the fabrication and performance of a metal-semiconductor-metal (MSM) photodetector with high efficiency and high speed. The MSM photodetector is fabricated on a 501 substrate with a 170-nm-thick Si active layer. A scattering backside reflector, consisting of inverted pyramids with 193-nm-long sides and 54.7° slopes, is buried underneath the active layer. This scattering buried backside reflector (SBBR) causes the trapping of light inside the active layer, resulting in an MSM photodetector with a response time of 5.4 ps and responsivity comparable with those on bulk Si at both the visible and infrared.

KW - Backside reflectors

KW - MSM photodetectors

KW - Si-on-insulator

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EP - 336

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Emerging Lithographic Technologies 1997

Y2 - 10 March 1997 through 14 March 1997

ER -

Fabrication of high performance MSM photodetectors on SOI with nanometer-scale scattering buried backside reflectors

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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