Fabrication of high performance MSM photodetectors on SOI with nanometer-scale scattering buried backside reflectors

Erli Chen, Stephen Y. Chou

Research output: Contribution to journalConference articlepeer-review

Abstract

We present the fabrication and performance of a metal-semiconductor-metal (MSM) photodetector with high efficiency and high speed. The MSM photodetector is fabricated on a 501 substrate with a 170-nm-thick Si active layer. A scattering backside reflector, consisting of inverted pyramids with 193-nm-long sides and 54.7° slopes, is buried underneath the active layer. This scattering buried backside reflector (SBBR) causes the trapping of light inside the active layer, resulting in an MSM photodetector with a response time of 5.4 ps and responsivity comparable with those on bulk Si at both the visible and infrared.

Original languageEnglish (US)
Pages (from-to)329-336
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3048
DOIs
StatePublished - Jul 7 1997
Externally publishedYes
EventEmerging Lithographic Technologies 1997 - Santa Clara, United States
Duration: Mar 10 1997Mar 14 1997

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Keywords

  • Backside reflectors
  • MSM photodetectors
  • Si-on-insulator

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