Fabrication of epitaxial Cu3Ge on sapphire with controlled crystallinity and planar defects

F. Wu, J. K. Zheng, W. Cai, N. Yao, Y. T. Zhu, J. Narayan

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

In this paper, we report the growth of epitaxial Cu3Ge thin films on c-plane sapphire substrate through domain matching epitaxy. Systematic study on the crystallinity of Cu3Ge thin films is carried out to correlate epitaxial characteristics with substrate lattice misfit. The crystallinity and epitaxy of the as-grown Cu3Ge thin films are improved considerably by controlling the parameters of pulsed laser deposition. The epitaxial characteristics and formation of twins in Cu3Ge are investigated and a mechanism of twin formation in Cu3Ge ε1-phase is discussed. The present study proves that the crystallinity and defect structure of Cu3Ge thin film can be controlled by adjusting the deposition parameters. It serves as a fundamental research for future applications of epitaxial Cu3Ge as metallization material in semiconductor industry.

Original languageEnglish (US)
Pages (from-to)238-243
Number of pages6
JournalJournal of Alloys and Compounds
Volume641
DOIs
StatePublished - Aug 15 2015

All Science Journal Classification (ASJC) codes

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

Keywords

  • CuGe thin film
  • Pulsed laser deposition
  • Sapphire
  • Semiconductor metallization
  • Twin

Fingerprint Dive into the research topics of 'Fabrication of epitaxial Cu<sub>3</sub>Ge on sapphire with controlled crystallinity and planar defects'. Together they form a unique fingerprint.

Cite this