The fabrication of 60-nm metal-oxide-semiconduictor field-effect transistors was carried out using nanoimprint lithography (NIL). The nanotransistors exhibit excellent operational characteristics across the wafer. The results show a significant advance in nanoimprint development and its application in manufacturing of integrated electrical, optical, chemical, and biological nanocircuits.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)