Abstract
The fabrication of 60-nm metal-oxide-semiconduictor field-effect transistors was carried out using nanoimprint lithography (NIL). The nanotransistors exhibit excellent operational characteristics across the wafer. The results show a significant advance in nanoimprint development and its application in manufacturing of integrated electrical, optical, chemical, and biological nanocircuits.
Original language | English (US) |
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Pages (from-to) | 1632-1634 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 83 |
Issue number | 8 |
DOIs | |
State | Published - Aug 25 2003 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)