Fabrication of 60-nm transistors on 4-in. wafer using nanoimprint at all lithography levels

Wei Zhang, Stephen Y. Chou

Research output: Contribution to journalArticle

100 Scopus citations

Abstract

The fabrication of 60-nm metal-oxide-semiconduictor field-effect transistors was carried out using nanoimprint lithography (NIL). The nanotransistors exhibit excellent operational characteristics across the wafer. The results show a significant advance in nanoimprint development and its application in manufacturing of integrated electrical, optical, chemical, and biological nanocircuits.

Original languageEnglish (US)
Pages (from-to)1632-1634
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number8
DOIs
StatePublished - Aug 25 2003

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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