Abstract
The advances in nanoimprint lithography, its application in nanogap metal contacts and related fabrication yield were discussed. The 5 nm linewidth and 14 nm linepitch in resist using nanoimprint lithography at room temperature with a pressure less than 15 psi was demonstrated. Gold contact were fabricated with 5 nm separation by nanoimprint in resist and lift-off of metal. It was shown that photocurable nanoimprint lithography (P-NIL) is capable of 14 nm pitch lines, 5 nm critical dimension features and can uniformly pattern an entire 4 in. wafer in a single step.
Original language | English (US) |
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Pages (from-to) | 5299-5301 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 84 |
Issue number | 26 |
DOIs | |
State | Published - Jun 28 2004 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)