Fabrication of 5 nm linewidth and 14 nm pitch features by nanoimprint lithography

The advances in nanoimprint lithography, its application in nanogap metal contacts and related fabrication yield were discussed. The 5 nm linewidth and 14 nm linepitch in resist using nanoimprint lithography at room temperature with a pressure less than 15 psi was demonstrated. Gold contact were fabricated with 5 nm separation by nanoimprint in resist and lift-off of metal. It was shown that photocurable nanoimprint lithography (P-NIL) is capable of 14 nm pitch lines, 5 nm critical dimension features and can uniformly pattern an entire 4 in. wafer in a single step.