Fabrication of 5 nm linewidth and 14 nm pitch features by nanoimprint lithography

Michael D. Austin, Haixiong Ge, Wei Wu, Mingtao Li, Zhaoning Yu, D. Wasserman, S. A. Lyon, Stephen Y. Chou

Research output: Contribution to journalArticle

502 Scopus citations

Abstract

The advances in nanoimprint lithography, its application in nanogap metal contacts and related fabrication yield were discussed. The 5 nm linewidth and 14 nm linepitch in resist using nanoimprint lithography at room temperature with a pressure less than 15 psi was demonstrated. Gold contact were fabricated with 5 nm separation by nanoimprint in resist and lift-off of metal. It was shown that photocurable nanoimprint lithography (P-NIL) is capable of 14 nm pitch lines, 5 nm critical dimension features and can uniformly pattern an entire 4 in. wafer in a single step.

Original languageEnglish (US)
Pages (from-to)5299-5301
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number26
DOIs
StatePublished - Jun 28 2004

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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