Fabrication and testing of pentacene thin-film transistors that use water-dispersible polyaniline electrodes

Kwang Seok Lee; Graciela B. Blanchet; Feng Gao; Yueh Lin Loo

doi:10.1109/DRC.2004.1367815

Fabrication and testing of pentacene thin-film transistors that use water-dispersible polyaniline electrodes

Kwang Seok Lee, Graciela B. Blanchet, Feng Gao, Yueh Lin Loo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Pentacene thin-film transistors (TFT) that use polyaniline (PANI) source and drain electrodes were fabricated and tested. A low-cost technique that uses pre-doped aqueous solutions of polyaniline (PANI), was deployed for patterning water-dispersible, conductive PANI. This technique relied on specific interactions between doped PANI and the substrate. The results show that saturation mobilities extracted from 20 PANI devices range between 0.001-0.01cm ²/Vs, approximately an order of magnitude lower than those exhibited by bottom-contact devices with Au electrodes.

Original language	English (US)
Title of host publication	Device Research Conference - Conference Digest, 62nd DRC
Pages	125-126
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2004.1367815
State	Published - 2004
Externally published	Yes
Event	Device Research Conference - Conference Digest, 62nd DRC - Notre Dame, IN, United States Duration: Jun 21 2004 → Jun 23 2004

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Other

Other	Device Research Conference - Conference Digest, 62nd DRC
Country/Territory	United States
City	Notre Dame, IN
Period	6/21/04 → 6/23/04

All Science Journal Classification (ASJC) codes

General Engineering

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10.1109/DRC.2004.1367815

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@inproceedings{4400d4e2d3ba4213a5f059cfd892b4ed,

title = "Fabrication and testing of pentacene thin-film transistors that use water-dispersible polyaniline electrodes",

abstract = "Pentacene thin-film transistors (TFT) that use polyaniline (PANI) source and drain electrodes were fabricated and tested. A low-cost technique that uses pre-doped aqueous solutions of polyaniline (PANI), was deployed for patterning water-dispersible, conductive PANI. This technique relied on specific interactions between doped PANI and the substrate. The results show that saturation mobilities extracted from 20 PANI devices range between 0.001-0.01cm 2/Vs, approximately an order of magnitude lower than those exhibited by bottom-contact devices with Au electrodes.",

author = "Lee, {Kwang Seok} and Blanchet, {Graciela B.} and Feng Gao and Loo, {Yueh Lin}",

year = "2004",

doi = "10.1109/DRC.2004.1367815",

language = "English (US)",

isbn = "0780382846",

series = "Device Research Conference - Conference Digest, DRC",

pages = "125--126",

booktitle = "Device Research Conference - Conference Digest, 62nd DRC",

}

Lee, KS, Blanchet, GB, Gao, F & Loo, YL 2004, Fabrication and testing of pentacene thin-film transistors that use water-dispersible polyaniline electrodes. in Device Research Conference - Conference Digest, 62nd DRC., III.-37, Device Research Conference - Conference Digest, DRC, pp. 125-126, Device Research Conference - Conference Digest, 62nd DRC, Notre Dame, IN, United States, 6/21/04. https://doi.org/10.1109/DRC.2004.1367815

Fabrication and testing of pentacene thin-film transistors that use water-dispersible polyaniline electrodes. / Lee, Kwang Seok; Blanchet, Graciela B.; Gao, Feng et al.
Device Research Conference - Conference Digest, 62nd DRC. 2004. p. 125-126 III.-37 (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Fabrication and testing of pentacene thin-film transistors that use water-dispersible polyaniline electrodes

AU - Lee, Kwang Seok

AU - Blanchet, Graciela B.

AU - Gao, Feng

AU - Loo, Yueh Lin

PY - 2004

Y1 - 2004

N2 - Pentacene thin-film transistors (TFT) that use polyaniline (PANI) source and drain electrodes were fabricated and tested. A low-cost technique that uses pre-doped aqueous solutions of polyaniline (PANI), was deployed for patterning water-dispersible, conductive PANI. This technique relied on specific interactions between doped PANI and the substrate. The results show that saturation mobilities extracted from 20 PANI devices range between 0.001-0.01cm 2/Vs, approximately an order of magnitude lower than those exhibited by bottom-contact devices with Au electrodes.

AB - Pentacene thin-film transistors (TFT) that use polyaniline (PANI) source and drain electrodes were fabricated and tested. A low-cost technique that uses pre-doped aqueous solutions of polyaniline (PANI), was deployed for patterning water-dispersible, conductive PANI. This technique relied on specific interactions between doped PANI and the substrate. The results show that saturation mobilities extracted from 20 PANI devices range between 0.001-0.01cm 2/Vs, approximately an order of magnitude lower than those exhibited by bottom-contact devices with Au electrodes.

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M3 - Conference contribution

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SN - 0780382846

T3 - Device Research Conference - Conference Digest, DRC

SP - 125

EP - 126

BT - Device Research Conference - Conference Digest, 62nd DRC

T2 - Device Research Conference - Conference Digest, 62nd DRC

Y2 - 21 June 2004 through 23 June 2004

ER -

Fabrication and testing of pentacene thin-film transistors that use water-dispersible polyaniline electrodes

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