Fabrication and microscopic characterization of a single quantum-wire laser with high uniformity

Masahiro Yoshita; Yuhei Hayamizu; Hidefumi Akiyama; Loren N. Pfeiffer; Ken W. West

doi:10.1016/j.physe.2003.11.024

Fabrication and microscopic characterization of a single quantum-wire laser with high uniformity

Masahiro Yoshita
, Yuhei Hayamizu
, Hidefumi Akiyama
, Loren N. Pfeiffer
, Ken W. West

Research output: Contribution to journal › Conference article › peer-review

4 Scopus citations

Abstract

A T-shaped single quantum-wire laser with high spatial uniformity has been fabricated by a cleaved-edge overgrowth method with molecular beam epitaxy and a growth-interrupt annealing technique. Using micro-photoluminescence imaging and spectroscopy, we confirmed the formation of a spatially uniform quantum wire over 20 μm long without hetero-interface roughness. By optical pumping, we achieved single-mode lasing from the ground state of the single quantum wire at a threshold excitation power as low as 5 mW at 5 K.

Original language	English (US)
Pages (from-to)	230-235
Number of pages	6
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	21
Issue number	2-4
DOIs	https://doi.org/10.1016/j.physe.2003.11.024
State	Published - Mar 2004
Externally published	Yes
Event	Proceedings of the Eleventh International Conference on Modulation (MSS11) - Nara, Japan Duration: Jul 14 2003 → Jul 18 2003

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

Keywords

MBE growth
Micro-PL
Quantum wire
Quantum-wire laser

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10.1016/j.physe.2003.11.024

Cite this

@article{5d28df2ad4cb40fca305207d03806c82,

title = "Fabrication and microscopic characterization of a single quantum-wire laser with high uniformity",

abstract = "A T-shaped single quantum-wire laser with high spatial uniformity has been fabricated by a cleaved-edge overgrowth method with molecular beam epitaxy and a growth-interrupt annealing technique. Using micro-photoluminescence imaging and spectroscopy, we confirmed the formation of a spatially uniform quantum wire over 20 μm long without hetero-interface roughness. By optical pumping, we achieved single-mode lasing from the ground state of the single quantum wire at a threshold excitation power as low as 5 mW at 5 K.",

keywords = "MBE growth, Micro-PL, Quantum wire, Quantum-wire laser",

author = "Masahiro Yoshita and Yuhei Hayamizu and Hidefumi Akiyama and Pfeiffer, \{Loren N.\} and West, \{Ken W.\}",

year = "2004",

month = mar,

doi = "10.1016/j.physe.2003.11.024",

language = "English (US)",

volume = "21",

pages = "230--235",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier B.V.",

number = "2-4",

note = "Proceedings of the Eleventh International Conference on Modulation (MSS11) ; Conference date: 14-07-2003 Through 18-07-2003",

}

TY - JOUR

T1 - Fabrication and microscopic characterization of a single quantum-wire laser with high uniformity

AU - Yoshita, Masahiro

AU - Hayamizu, Yuhei

AU - Akiyama, Hidefumi

AU - Pfeiffer, Loren N.

AU - West, Ken W.

PY - 2004/3

Y1 - 2004/3

N2 - A T-shaped single quantum-wire laser with high spatial uniformity has been fabricated by a cleaved-edge overgrowth method with molecular beam epitaxy and a growth-interrupt annealing technique. Using micro-photoluminescence imaging and spectroscopy, we confirmed the formation of a spatially uniform quantum wire over 20 μm long without hetero-interface roughness. By optical pumping, we achieved single-mode lasing from the ground state of the single quantum wire at a threshold excitation power as low as 5 mW at 5 K.

AB - A T-shaped single quantum-wire laser with high spatial uniformity has been fabricated by a cleaved-edge overgrowth method with molecular beam epitaxy and a growth-interrupt annealing technique. Using micro-photoluminescence imaging and spectroscopy, we confirmed the formation of a spatially uniform quantum wire over 20 μm long without hetero-interface roughness. By optical pumping, we achieved single-mode lasing from the ground state of the single quantum wire at a threshold excitation power as low as 5 mW at 5 K.

KW - MBE growth

KW - Micro-PL

KW - Quantum wire

KW - Quantum-wire laser

UR - https://www.scopus.com/pages/publications/1642301014

UR - https://www.scopus.com/pages/publications/1642301014#tab=citedBy

U2 - 10.1016/j.physe.2003.11.024

DO - 10.1016/j.physe.2003.11.024

M3 - Conference article

AN - SCOPUS:1642301014

SN - 1386-9477

VL - 21

SP - 230

EP - 235

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 2-4

T2 - Proceedings of the Eleventh International Conference on Modulation (MSS11)

Y2 - 14 July 2003 through 18 July 2003

ER -

Fabrication and microscopic characterization of a single quantum-wire laser with high uniformity

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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