Fabrication and characterization of room temperature silicon single electron memory

Lingjie Guo; Effendi Leobandung; Lei Zhuang; Stephen Y. Chou

doi:10.1116/1.589740

Fabrication and characterization of room temperature silicon single electron memory

Lingjie Guo, Effendi Leobandung, Lei Zhuang, Stephen Y. Chou

Research output: Contribution to journal › Article › peer-review

48 Scopus citations

Abstract

A single electron memory was demonstrated in crystalline silicon that has a transistor channel width of ∼10 nm and a nanoscale floating gate of dimension ∼(7 nm × 7 nm × 2 nm), patterned by electron beam lithography, lift-off, and reactive ion etching. Quantized shift in the threshold voltage and self-limited charging process have been observed at room temperature. Analysis has shown that these quantized characteristics are the results of single electron charging effect in the nanoscale floating gate.

Original language	English (US)
Pages (from-to)	2840-2843
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	15
Issue number	6
DOIs	https://doi.org/10.1116/1.589740
State	Published - 1997
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1116/1.589740

Cite this

@article{6cb93c3d3b78446ead0e1c06d680a138,

title = "Fabrication and characterization of room temperature silicon single electron memory",

abstract = "A single electron memory was demonstrated in crystalline silicon that has a transistor channel width of ∼10 nm and a nanoscale floating gate of dimension ∼(7 nm × 7 nm × 2 nm), patterned by electron beam lithography, lift-off, and reactive ion etching. Quantized shift in the threshold voltage and self-limited charging process have been observed at room temperature. Analysis has shown that these quantized characteristics are the results of single electron charging effect in the nanoscale floating gate.",

author = "Lingjie Guo and Effendi Leobandung and Lei Zhuang and Chou, \{Stephen Y.\}",

year = "1997",

doi = "10.1116/1.589740",

language = "English (US)",

volume = "15",

pages = "2840--2843",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "American Institute of Physics",

number = "6",

}

TY - JOUR

T1 - Fabrication and characterization of room temperature silicon single electron memory

AU - Guo, Lingjie

AU - Leobandung, Effendi

AU - Zhuang, Lei

AU - Chou, Stephen Y.

PY - 1997

Y1 - 1997

N2 - A single electron memory was demonstrated in crystalline silicon that has a transistor channel width of ∼10 nm and a nanoscale floating gate of dimension ∼(7 nm × 7 nm × 2 nm), patterned by electron beam lithography, lift-off, and reactive ion etching. Quantized shift in the threshold voltage and self-limited charging process have been observed at room temperature. Analysis has shown that these quantized characteristics are the results of single electron charging effect in the nanoscale floating gate.

AB - A single electron memory was demonstrated in crystalline silicon that has a transistor channel width of ∼10 nm and a nanoscale floating gate of dimension ∼(7 nm × 7 nm × 2 nm), patterned by electron beam lithography, lift-off, and reactive ion etching. Quantized shift in the threshold voltage and self-limited charging process have been observed at room temperature. Analysis has shown that these quantized characteristics are the results of single electron charging effect in the nanoscale floating gate.

UR - https://www.scopus.com/pages/publications/0000740684

UR - https://www.scopus.com/inward/citedby.url?scp=0000740684&partnerID=8YFLogxK

U2 - 10.1116/1.589740

DO - 10.1116/1.589740

M3 - Article

AN - SCOPUS:0000740684

SN - 1071-1023

VL - 15

SP - 2840

EP - 2843

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 6

ER -

Fabrication and characterization of room temperature silicon single electron memory

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this