Abstract
A single electron memory was demonstrated in crystalline silicon that has a transistor channel width of ∼10 nm and a nanoscale floating gate of dimension ∼(7 nm × 7 nm × 2 nm), patterned by electron beam lithography, lift-off, and reactive ion etching. Quantized shift in the threshold voltage and self-limited charging process have been observed at room temperature. Analysis has shown that these quantized characteristics are the results of single electron charging effect in the nanoscale floating gate.
Original language | English (US) |
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Pages (from-to) | 2840-2843 |
Number of pages | 4 |
Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
Volume | 15 |
Issue number | 6 |
DOIs | |
State | Published - 1997 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering