Fabrication and characterization of precisely graded parabolic quantum wells using monolayer deposition

B. E. Kane; G. R. Facer; R. G. Clark; L. N. Pfeiffer; K. W. West; G. S. Boebinger

Fabrication and characterization of precisely graded parabolic quantum wells using monolayer deposition

B. E. Kane, G. R. Facer, R. G. Clark, L. N. Pfeiffer, K. W. West, G. S. Boebinger

Research output: Contribution to conference › Paper › peer-review

Abstract

We describe the fabrication and low-temperature characterization of high quality parabolic quantum wells, grown with GaAs/Al _xGa _1-xAs molecular beam epitaxy using the novel method of depositing single monolayers of either GaAs or Al _xGa ^1-xAs so as to produce an average parabolic potential. The high quality of these wells is attested to by the appearance of magnetoresistance oscillations associated with the population of the second subband, observable at low temperatures when the well is oriented nearly parallel to the magnetic field, a phenomenon not previously observed in parabolic quantum wells.

Original language	English (US)
Pages	175-178
Number of pages	4
State	Published - 1996
Externally published	Yes
Event	Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD - Canberra, Aust Duration: Dec 8 1996 → Dec 11 1996

Conference

Conference	Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD
City	Canberra, Aust
Period	12/8/96 → 12/11/96

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

@conference{75bc813d87ac417faf9f223472c67b66,

title = "Fabrication and characterization of precisely graded parabolic quantum wells using monolayer deposition",

abstract = "We describe the fabrication and low-temperature characterization of high quality parabolic quantum wells, grown with GaAs/Al xGa 1-xAs molecular beam epitaxy using the novel method of depositing single monolayers of either GaAs or Al xGa 1-xAs so as to produce an average parabolic potential. The high quality of these wells is attested to by the appearance of magnetoresistance oscillations associated with the population of the second subband, observable at low temperatures when the well is oriented nearly parallel to the magnetic field, a phenomenon not previously observed in parabolic quantum wells.",

author = "Kane, {B. E.} and Facer, {G. R.} and Clark, {R. G.} and Pfeiffer, {L. N.} and West, {K. W.} and Boebinger, {G. S.}",

year = "1996",

language = "English (US)",

pages = "175--178",

note = "Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD ; Conference date: 08-12-1996 Through 11-12-1996",

}

Fabrication and characterization of precisely graded parabolic quantum wells using monolayer deposition. / Kane, B. E.; Facer, G. R.; Clark, R. G. et al.
1996. 175-178 Paper presented at Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD, Canberra, Aust.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Fabrication and characterization of precisely graded parabolic quantum wells using monolayer deposition

AU - Kane, B. E.

AU - Facer, G. R.

AU - Clark, R. G.

AU - Pfeiffer, L. N.

AU - West, K. W.

AU - Boebinger, G. S.

PY - 1996

Y1 - 1996

N2 - We describe the fabrication and low-temperature characterization of high quality parabolic quantum wells, grown with GaAs/Al xGa 1-xAs molecular beam epitaxy using the novel method of depositing single monolayers of either GaAs or Al xGa 1-xAs so as to produce an average parabolic potential. The high quality of these wells is attested to by the appearance of magnetoresistance oscillations associated with the population of the second subband, observable at low temperatures when the well is oriented nearly parallel to the magnetic field, a phenomenon not previously observed in parabolic quantum wells.

AB - We describe the fabrication and low-temperature characterization of high quality parabolic quantum wells, grown with GaAs/Al xGa 1-xAs molecular beam epitaxy using the novel method of depositing single monolayers of either GaAs or Al xGa 1-xAs so as to produce an average parabolic potential. The high quality of these wells is attested to by the appearance of magnetoresistance oscillations associated with the population of the second subband, observable at low temperatures when the well is oriented nearly parallel to the magnetic field, a phenomenon not previously observed in parabolic quantum wells.

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UR - http://www.scopus.com/inward/citedby.url?scp=0030361659&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0030361659

SP - 175

EP - 178

T2 - Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD

Y2 - 8 December 1996 through 11 December 1996

ER -

Fabrication and characterization of precisely graded parabolic quantum wells using monolayer deposition

Abstract

Conference

All Science Journal Classification (ASJC) codes

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