Fabrication and characterization of diamond FETs with 2D conducting channels

David I. Shahin; Kiran Kumar Kovi; Aayush Thapa; Yizhou Lu; Ilya Ponomarev; James E. Butler; Aris Christou

Fabrication and characterization of diamond FETs with 2D conducting channels

David I. Shahin
, Kiran Kumar Kovi
, Aayush Thapa
, Yizhou Lu
, Ilya Ponomarev
, James E. Butler
, Aris Christou

Research output: Contribution to conference › Paper › peer-review

Abstract

Field effect transistors (FETs) have been fabricated on smooth (< 3 Å RMS roughness) hydrogen-terminated diamond substrates. FETs with a 25 nm thick Al2O3 dielectric exhibited slightly normally-off behavior with threshold voltage of -0.8 V and maximum output current of 36.8 mA/mm at -10V drain bias. Open air storage and testing of the devices resulted in no shifts in the transfer characteristics, although a slight degradation in output current was observed. The degradation in drain current is believed to be due to passivation of the hydrogen termination by atmospheric contaminants penetrating the Al2O3 dielectric layer.

Original language	English (US)
State	Published - 2018
Externally published	Yes
Event	2018 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2018 - Austin, United States Duration: May 7 2018 → May 10 2018

Conference

Conference	2018 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2018
Country/Territory	United States
City	Austin
Period	5/7/18 → 5/10/18

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering

Keywords

2D
Al2O3
Diamond
Field Effect Transistor
Hydrogen-Terminated

Cite this

@conference{cf576dda01794462b9373b93848653b4,

title = "Fabrication and characterization of diamond FETs with 2D conducting channels",

abstract = "Field effect transistors (FETs) have been fabricated on smooth (< 3 {\AA} RMS roughness) hydrogen-terminated diamond substrates. FETs with a 25 nm thick Al2O3 dielectric exhibited slightly normally-off behavior with threshold voltage of -0.8 V and maximum output current of 36.8 mA/mm at -10V drain bias. Open air storage and testing of the devices resulted in no shifts in the transfer characteristics, although a slight degradation in output current was observed. The degradation in drain current is believed to be due to passivation of the hydrogen termination by atmospheric contaminants penetrating the Al2O3 dielectric layer.",

keywords = "2D, Al2O3, Diamond, Field Effect Transistor, Hydrogen-Terminated",

author = "Shahin, \{David I.\} and Kovi, \{Kiran Kumar\} and Aayush Thapa and Yizhou Lu and Ilya Ponomarev and Butler, \{James E.\} and Aris Christou",

note = "Publisher Copyright: {\textcopyright} 2018 GaAs Mantech Incorporated. All Rights Reserved.; 2018 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2018 ; Conference date: 07-05-2018 Through 10-05-2018",

year = "2018",

language = "English (US)",

}

TY - CONF

T1 - Fabrication and characterization of diamond FETs with 2D conducting channels

AU - Shahin, David I.

AU - Kovi, Kiran Kumar

AU - Thapa, Aayush

AU - Lu, Yizhou

AU - Ponomarev, Ilya

AU - Butler, James E.

AU - Christou, Aris

PY - 2018

Y1 - 2018

N2 - Field effect transistors (FETs) have been fabricated on smooth (< 3 Å RMS roughness) hydrogen-terminated diamond substrates. FETs with a 25 nm thick Al2O3 dielectric exhibited slightly normally-off behavior with threshold voltage of -0.8 V and maximum output current of 36.8 mA/mm at -10V drain bias. Open air storage and testing of the devices resulted in no shifts in the transfer characteristics, although a slight degradation in output current was observed. The degradation in drain current is believed to be due to passivation of the hydrogen termination by atmospheric contaminants penetrating the Al2O3 dielectric layer.

AB - Field effect transistors (FETs) have been fabricated on smooth (< 3 Å RMS roughness) hydrogen-terminated diamond substrates. FETs with a 25 nm thick Al2O3 dielectric exhibited slightly normally-off behavior with threshold voltage of -0.8 V and maximum output current of 36.8 mA/mm at -10V drain bias. Open air storage and testing of the devices resulted in no shifts in the transfer characteristics, although a slight degradation in output current was observed. The degradation in drain current is believed to be due to passivation of the hydrogen termination by atmospheric contaminants penetrating the Al2O3 dielectric layer.

KW - 2D

KW - Al2O3

KW - Diamond

KW - Field Effect Transistor

KW - Hydrogen-Terminated

UR - https://www.scopus.com/pages/publications/85050008004

UR - https://www.scopus.com/pages/publications/85050008004#tab=citedBy

M3 - Paper

AN - SCOPUS:85050008004

T2 - 2018 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2018

Y2 - 7 May 2018 through 10 May 2018

ER -

Fabrication and characterization of diamond FETs with 2D conducting channels

Abstract

Conference

All Science Journal Classification (ASJC) codes

Keywords

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