@inproceedings{e119caf8a39a401087f3f214ea3f00e9,
title = "Extremely sharp phosphorus turn-off slope and effect of hydrogen on phosphorus surface segregation in epitaxially-grown relaxed Si0.7Ge0.3 by RTCVD",
abstract = "Si quantum dots formed in a Si/SiGe two-dimensional gas (2DEG) are a promising candidate for the realization of solidstate quantum computation. To achieve effective Schottky gating for charge manipulation in the normal structures, a sharp phosphorus turn-off is required. We investigated phosphorus surface segregation in relaxed Si 0.7Ge 0.3 epitaxially grown by rapid thermal chemical vapor deposition (RTCVD) and report a record sharp turn-off slope of phosphorus of 6 nm/dec. The hydrogen surface coverage, which increases at low temperature, is a key mechanism for such sharp slopes. We demonstrated the sharp phosphorus turn-off enables a high quality inverted 2DEG of high mobiltiy and low electron density.",
author = "Li, \{Jiun Yun\} and Huang, \{Chiao Ti\} and Sturm, \{James C.\}",
year = "2012",
doi = "10.1109/ISTDM.2012.6222436",
language = "English (US)",
isbn = "9781457718625",
series = "2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings",
pages = "20--21",
booktitle = "2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings",
note = "6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 ; Conference date: 04-06-2012 Through 06-06-2012",
}