Extremely sharp phosphorus turn-off slope and effect of hydrogen on phosphorus surface segregation in epitaxially-grown relaxed Si0.7Ge0.3 by RTCVD

Jiun Yun Li, Chiao Ti Huang, James Christopher Sturm

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Si quantum dots formed in a Si/SiGe two-dimensional gas (2DEG) are a promising candidate for the realization of solidstate quantum computation. To achieve effective Schottky gating for charge manipulation in the normal structures, a sharp phosphorus turn-off is required. We investigated phosphorus surface segregation in relaxed Si 0.7Ge 0.3 epitaxially grown by rapid thermal chemical vapor deposition (RTCVD) and report a record sharp turn-off slope of phosphorus of 6 nm/dec. The hydrogen surface coverage, which increases at low temperature, is a key mechanism for such sharp slopes. We demonstrated the sharp phosphorus turn-off enables a high quality inverted 2DEG of high mobiltiy and low electron density.

Original languageEnglish (US)
Title of host publication2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings
Pages20-21
Number of pages2
DOIs
StatePublished - Jul 30 2012
Event6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Berkeley, CA, United States
Duration: Jun 4 2012Jun 6 2012

Publication series

Name2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings

Other

Other6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012
CountryUnited States
CityBerkeley, CA
Period6/4/126/6/12

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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