TY - GEN
T1 - Extremely sharp phosphorus turn-off slope and effect of hydrogen on phosphorus surface segregation in epitaxially-grown relaxed Si0.7Ge0.3 by RTCVD
AU - Li, Jiun Yun
AU - Huang, Chiao Ti
AU - Sturm, James C.
PY - 2012
Y1 - 2012
N2 - Si quantum dots formed in a Si/SiGe two-dimensional gas (2DEG) are a promising candidate for the realization of solidstate quantum computation. To achieve effective Schottky gating for charge manipulation in the normal structures, a sharp phosphorus turn-off is required. We investigated phosphorus surface segregation in relaxed Si 0.7Ge 0.3 epitaxially grown by rapid thermal chemical vapor deposition (RTCVD) and report a record sharp turn-off slope of phosphorus of 6 nm/dec. The hydrogen surface coverage, which increases at low temperature, is a key mechanism for such sharp slopes. We demonstrated the sharp phosphorus turn-off enables a high quality inverted 2DEG of high mobiltiy and low electron density.
AB - Si quantum dots formed in a Si/SiGe two-dimensional gas (2DEG) are a promising candidate for the realization of solidstate quantum computation. To achieve effective Schottky gating for charge manipulation in the normal structures, a sharp phosphorus turn-off is required. We investigated phosphorus surface segregation in relaxed Si 0.7Ge 0.3 epitaxially grown by rapid thermal chemical vapor deposition (RTCVD) and report a record sharp turn-off slope of phosphorus of 6 nm/dec. The hydrogen surface coverage, which increases at low temperature, is a key mechanism for such sharp slopes. We demonstrated the sharp phosphorus turn-off enables a high quality inverted 2DEG of high mobiltiy and low electron density.
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U2 - 10.1109/ISTDM.2012.6222436
DO - 10.1109/ISTDM.2012.6222436
M3 - Conference contribution
AN - SCOPUS:84864184998
SN - 9781457718625
T3 - 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings
SP - 20
EP - 21
BT - 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings
T2 - 6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012
Y2 - 4 June 2012 through 6 June 2012
ER -