Extremely low electron density in a modulation-doped Si/SiGe two-dimensional electron gases by effective schottky gating

J. Y. Li, C. T. Huang, L. P. Rokhinson, J. C. Sturm

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

We reported an extremely low electron density (8.3 x 1010 cm-2) of a modulation-doped Si/SiGe two-dimensional electron gas by Schottky gating. Effective Schottky gating with extremely low gate leakage current was enabled by low-temperature chemical vapor deposition epitaxial growth to suppress the surface segregation of phosphorus. Furthermore, an extremely high electron mobility of ∼ 504,000 cm2/V-s at 0.3 K was also reported.

Original languageEnglish (US)
Title of host publicationLow-Dimensional Nanoscale Electronic and Low-Dimensional Nanoscale Electronic and on Compound Semiconductors 54, SOTAPOCS 2012
Pages145-149
Number of pages5
Edition6
DOIs
StatePublished - Dec 1 2012
EventSymposia on Low-Dimensional Nanoscale Electronic and Photonic Devices 5 and State-of-the-Art Program on Compound Semiconductors 2012, SOTAPOCS 54 - 222nd ECS Meeting/PRiME 2012 - Honolulu, HI, United States
Duration: Oct 7 2012Oct 12 2012

Publication series

NameECS Transactions
Number6
Volume50
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherSymposia on Low-Dimensional Nanoscale Electronic and Photonic Devices 5 and State-of-the-Art Program on Compound Semiconductors 2012, SOTAPOCS 54 - 222nd ECS Meeting/PRiME 2012
CountryUnited States
CityHonolulu, HI
Period10/7/1210/12/12

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Li, J. Y., Huang, C. T., Rokhinson, L. P., & Sturm, J. C. (2012). Extremely low electron density in a modulation-doped Si/SiGe two-dimensional electron gases by effective schottky gating. In Low-Dimensional Nanoscale Electronic and Low-Dimensional Nanoscale Electronic and on Compound Semiconductors 54, SOTAPOCS 2012 (6 ed., pp. 145-149). (ECS Transactions; Vol. 50, No. 6). https://doi.org/10.1149/05006.0145ecst