@inproceedings{8162d45f53dc441b96dc21f3327f3e65,
title = "Extremely low electron density in a modulation-doped Si/SiGe two-dimensional electron gases by effective schottky gating",
abstract = "We reported an extremely low electron density (8.3 x 1010 cm-2) of a modulation-doped Si/SiGe two-dimensional electron gas by Schottky gating. Effective Schottky gating with extremely low gate leakage current was enabled by low-temperature chemical vapor deposition epitaxial growth to suppress the surface segregation of phosphorus. Furthermore, an extremely high electron mobility of ∼ 504,000 cm2/V-s at 0.3 K was also reported.",
author = "Li, {J. Y.} and Huang, {C. T.} and Rokhinson, {L. P.} and Sturm, {J. C.}",
year = "2013",
doi = "10.1149/05006.0145ecst",
language = "English (US)",
isbn = "9781607683544",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "6",
pages = "145--149",
booktitle = "Low-Dimensional Nanoscale Electronic and Low-Dimensional Nanoscale Electronic and on Compound Semiconductors 54, SOTAPOCS 2012",
edition = "6",
note = "Symposia on Low-Dimensional Nanoscale Electronic and Photonic Devices 5 and State-of-the-Art Program on Compound Semiconductors 2012, SOTAPOCS 54 - 222nd ECS Meeting/PRiME 2012 ; Conference date: 07-10-2012 Through 12-10-2012",
}