Extremely high electron mobility in isotopically-enriched 28Si two-dimensional electron gases grown by chemical vapor deposition

Jiun Yun Li; Chiao Ti Huang; Leonid P. Rokhinson; James C. Sturm

doi:10.1063/1.4824729

Extremely high electron mobility in isotopically-enriched ²⁸Si two-dimensional electron gases grown by chemical vapor deposition

Jiun Yun Li
, Chiao Ti Huang
, Leonid P. Rokhinson
, James C. Sturm

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

Both depletion-mode and enhancement-mode two-dimensional electron gases (2DEGs) in isotopically enriched ²⁸Si with extremely high mobility (522 000 cm²/V s) are presented. The samples were grown by chemical vapor deposition using enriched silane. The fraction of the spin-carrying isotope ²⁹Si was reduced to the level of 800 ppm by ²⁸Si enrichment, with the electron spin dephasing time expected to be as long as 2 μs. Remote impurity charges from ionized dopants and the Si/Al ₂O₃ interface were suggested to be the dominant source for electron scattering in the enriched ²⁸Si 2DEGs.

Original language	English (US)
Article number	162105
Journal	Applied Physics Letters
Volume	103
Issue number	16
DOIs	https://doi.org/10.1063/1.4824729
State	Published - Oct 14 2013

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4824729

Cite this

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title = "Extremely high electron mobility in isotopically-enriched 28Si two-dimensional electron gases grown by chemical vapor deposition",

abstract = "Both depletion-mode and enhancement-mode two-dimensional electron gases (2DEGs) in isotopically enriched 28Si with extremely high mobility (522 000 cm2/V s) are presented. The samples were grown by chemical vapor deposition using enriched silane. The fraction of the spin-carrying isotope 29Si was reduced to the level of 800 ppm by 28Si enrichment, with the electron spin dephasing time expected to be as long as 2 μs. Remote impurity charges from ionized dopants and the Si/Al 2O3 interface were suggested to be the dominant source for electron scattering in the enriched 28Si 2DEGs.",

author = "Li, \{Jiun Yun\} and Huang, \{Chiao Ti\} and Rokhinson, \{Leonid P.\} and Sturm, \{James C.\}",

note = "Funding Information: This work at Princeton University was sponsored by United States Department of Defense through DARPA) and through ARO (project W911NF-09-1-0498), and by the NSF MRSEC program (DMR-0819860). The views and conclusions contained in this document are those of the authors and should not be interpreted as representing the official policies, either expressly or implied, of the U.S. Government. We also thank Amberwave Semiconductor for supplying the relaxed SiGe buffers. 0.7 0.3",

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doi = "10.1063/1.4824729",

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volume = "103",

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AU - Li, Jiun Yun

AU - Huang, Chiao Ti

AU - Rokhinson, Leonid P.

AU - Sturm, James C.

N1 - Funding Information: This work at Princeton University was sponsored by United States Department of Defense through DARPA) and through ARO (project W911NF-09-1-0498), and by the NSF MRSEC program (DMR-0819860). The views and conclusions contained in this document are those of the authors and should not be interpreted as representing the official policies, either expressly or implied, of the U.S. Government. We also thank Amberwave Semiconductor for supplying the relaxed SiGe buffers. 0.7 0.3

PY - 2013/10/14

Y1 - 2013/10/14

N2 - Both depletion-mode and enhancement-mode two-dimensional electron gases (2DEGs) in isotopically enriched 28Si with extremely high mobility (522 000 cm2/V s) are presented. The samples were grown by chemical vapor deposition using enriched silane. The fraction of the spin-carrying isotope 29Si was reduced to the level of 800 ppm by 28Si enrichment, with the electron spin dephasing time expected to be as long as 2 μs. Remote impurity charges from ionized dopants and the Si/Al 2O3 interface were suggested to be the dominant source for electron scattering in the enriched 28Si 2DEGs.

AB - Both depletion-mode and enhancement-mode two-dimensional electron gases (2DEGs) in isotopically enriched 28Si with extremely high mobility (522 000 cm2/V s) are presented. The samples were grown by chemical vapor deposition using enriched silane. The fraction of the spin-carrying isotope 29Si was reduced to the level of 800 ppm by 28Si enrichment, with the electron spin dephasing time expected to be as long as 2 μs. Remote impurity charges from ionized dopants and the Si/Al 2O3 interface were suggested to be the dominant source for electron scattering in the enriched 28Si 2DEGs.

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IS - 16

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ER -

Extremely high electron mobility in isotopically-enriched ²⁸Si two-dimensional electron gases grown by chemical vapor deposition

Abstract

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