Extremely high electron mobility in isotopically-enriched 28Si two-dimensional electron gases grown by chemical vapor deposition

Jiun Yun Li, Chiao Ti Huang, Leonid P. Rokhinson, James C. Sturm

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14 Scopus citations

Abstract

Both depletion-mode and enhancement-mode two-dimensional electron gases (2DEGs) in isotopically enriched 28Si with extremely high mobility (522 000 cm2/V s) are presented. The samples were grown by chemical vapor deposition using enriched silane. The fraction of the spin-carrying isotope 29Si was reduced to the level of 800 ppm by 28Si enrichment, with the electron spin dephasing time expected to be as long as 2 μs. Remote impurity charges from ionized dopants and the Si/Al 2O3 interface were suggested to be the dominant source for electron scattering in the enriched 28Si 2DEGs.

Original languageEnglish (US)
Article number162105
JournalApplied Physics Letters
Volume103
Issue number16
DOIs
StatePublished - Oct 14 2013

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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