Extending the wavelength range of single emitter diode lasers for medical and sensing applications: 12xx-nm quantum dots, 2000-nm wells, > 5000-nm cascade lasers

Paul Crump, Steve Patterson, Sandrio Elim, Shiguo Zhang, Mike Bougher, Jason Patterson, Suhit Das, Weimin Dong, Mike Grimshaw, Jun Wang, Damian Wise, Mark DeFranza, Jake Bell, Jason Farmer, Mark DeVito, Rob Martinsen, Alexey Kovsh, Fatima Toor, Claire F. Gmachl

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations

Abstract

Diode lasers supply high power densities at wavelengths from 635-nm to 2000-nm, with different applications enabled by providing this power at different wavelengths. As the range of available wavelengths broadens, many novel medical and atmospheric applications are enabled. Traditional quantum well lasers provide high performance in the range 635-nm to 1100-nm range for GaAs-based devices and 1280-nm to 2000-nm for InP, leaving a notable gaps from 1100 to 1280-nm, and above 1500-nm. There are many important medical and sensing applications in the 12xx-nm range and quantum dots produced using Stranski-Krastanow self-organized MBE growth on GaAs substrates provide an alternative high performance solution. We present results confirming broad area quantum dot lasers can deliver high optical powers of 16-W per emitter and high power conversion efficiency of 35% in this wavelength range. In addition, there are growing applications for high power sources in wavelengths > 1500-nm. We present a brief review of our current performance status in this wavelength range, both with conventional quantum wells in the 1500-nm to 2500-nm range and MOCVD grown quantum cascade lasers for wavelengths > 4000-nm. At each wavelength, we review the designs that deliver this performance, prospects for increased performance and the potential for further broadening the availability of novel wavelengths for high power applications.

Original languageEnglish (US)
Title of host publicationHigh-Power Diode Laser Technology and Applications V
DOIs
StatePublished - 2007
EventHigh-Power Diode Laser Technology and Applications V - San Jose, CA, United States
Duration: Jan 22 2007Jan 24 2007

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6456
ISSN (Print)0277-786X

Other

OtherHigh-Power Diode Laser Technology and Applications V
CountryUnited States
CitySan Jose, CA
Period1/22/071/24/07

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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