Experimental studies of the fractional quantum Hall effect in the first excited Landau level

W. Pan, J. S. Xia, H. L. Stormer, D. C. Tsui, C. Vicente, E. D. Adams, N. S. Sullivan, L. N. Pfeiffer, K. W. Baldwin, K. W. West

Research output: Contribution to journalArticlepeer-review

135 Scopus citations

Abstract

We present a spectrum of experimental data on the fractional quantum Hall effect (FQHE) states in the first excited Landau level, obtained in an ultrahigh mobility two-dimensional electron system and at very low temperatures, and report the following results. For the even-denominator FQHE states, the sample dependence of the ν=5/2 state clearly shows that disorder plays an important role in determining the energy gap at ν=5/2. For the developing ν=19/8 FQHE state, the temperature dependence of the Rxx minimum implies an energy gap of ∼5 mK. The energy gaps of the odd-denominator FQHE states at ν=7/3 and 8/3 also increase with decreasing disorder, similar to the gap at 5/2 state. Unexpectedly and contrary to earlier data on lower mobility samples, in this ultrahigh quality specimen, the ν=13/5 state is missing, while its particle-hole conjugate state, the ν=12/5 state, is a fully developed FQHE state. We speculate that this disappearance might indicate a spin polarization of the ν=13/5 state. Finally, the temperature dependence is studied for the two-reentrant integer quantum Hall states around ν=5/2 and is found to show a very narrow temperature range for the transition from quantized to classical value.

Original languageEnglish (US)
Article number075307
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume77
Issue number7
DOIs
StatePublished - Feb 8 2008
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint

Dive into the research topics of 'Experimental studies of the fractional quantum Hall effect in the first excited Landau level'. Together they form a unique fingerprint.

Cite this