Abstract
Graphene and topological insulators (TI) possess two-dimensional (2D) Dirac fermions with distinct physical properties. Integrating these two Dirac materials in a single device creates interesting opportunities for exploring new physics of interacting massless Dirac fermions. Here we report on a practical route to experimental fabrication of graphene-Sb2Te3heterostructure. The graphene-TI heterostructures are prepared by using a dry transfer of chemical-vapor-deposition grown graphene film. ARPES measurements confirm the coexistence of topological surface states of Sb2Te3and Dirac 7rbands of graphene, and identify the twist angle in the graphene-TI heterostructure. The results suggest a potential tunable electronic platform in which two different Dirac low-energy states dominate the transport behavior.
Original language | English (US) |
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Article number | 021009 |
Journal | 2D Materials |
Volume | 3 |
Issue number | 2 |
DOIs | |
State | Published - May 11 2016 |
All Science Journal Classification (ASJC) codes
- General Chemistry
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
Keywords
- ARPES
- Graphene
- Heterostructure
- Proximity effect
- Topological insulator