Experimental evidence for a spin-polarized ground state in the ν=5/2 fractional quantum Hall effect

W. Pan; H. L. Stormer; D. C. Tsui; L. N. Pfeiffer; K. W. Baldwin; K. W. West

doi:10.1016/S0038-1098(01)00311-8

Experimental evidence for a spin-polarized ground state in the ν=5/2 fractional quantum Hall effect

W. Pan, H. L. Stormer, D. C. Tsui, L. N. Pfeiffer, K. W. Baldwin, K. W. West

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46 Scopus citations

Abstract

We study the ν=5/2 even-denominator fractional quantum Hall effect (FQHE) over a wide range of magnetic field in a heterojunction insulated gate field-effect transistor (HIGFET). The electron density can be tuned from n=0-7.6×10¹¹ cm^-2 with a peak mobility μ=5.5×10⁶ cm² Vs^-1. The ν=5/2 state shows a strong minimum in diagonal resistance and a developing Hall plateau at magnetic fields (B) as high as 12.6 T. The strength of the energy gap varies smoothly with B-field. We interpret these observations as strong evidence for a spin-polarized ground state at ν=5/2.

Original language	English (US)
Pages (from-to)	641-645
Number of pages	5
Journal	Solid State Communications
Volume	119
Issue number	12
DOIs	https://doi.org/10.1016/S0038-1098(01)00311-8
State	Published - Sep 5 2001
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Chemistry
Condensed Matter Physics
Materials Chemistry

Keywords

C. field-effect transistor
C. two-dimensional electron system
D. quantum Hall effect

Access to Document

10.1016/S0038-1098(01)00311-8

Cite this

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title = "Experimental evidence for a spin-polarized ground state in the ν=5/2 fractional quantum Hall effect",

abstract = "We study the ν=5/2 even-denominator fractional quantum Hall effect (FQHE) over a wide range of magnetic field in a heterojunction insulated gate field-effect transistor (HIGFET). The electron density can be tuned from n=0-7.6×1011 cm-2 with a peak mobility μ=5.5×106 cm2 Vs-1. The ν=5/2 state shows a strong minimum in diagonal resistance and a developing Hall plateau at magnetic fields (B) as high as 12.6 T. The strength of the energy gap varies smoothly with B-field. We interpret these observations as strong evidence for a spin-polarized ground state at ν=5/2.",

keywords = "C. field-effect transistor, C. two-dimensional electron system, D. quantum Hall effect",

author = "W. Pan and Stormer, {H. L.} and Tsui, {D. C.} and Pfeiffer, {L. N.} and Baldwin, {K. W.} and West, {K. W.}",

year = "2001",

month = sep,

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doi = "10.1016/S0038-1098(01)00311-8",

language = "English (US)",

volume = "119",

pages = "641--645",

journal = "Solid State Communications",

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number = "12",

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TY - JOUR

T1 - Experimental evidence for a spin-polarized ground state in the ν=5/2 fractional quantum Hall effect

AU - Pan, W.

AU - Stormer, H. L.

AU - Tsui, D. C.

AU - Pfeiffer, L. N.

AU - Baldwin, K. W.

AU - West, K. W.

PY - 2001/9/5

Y1 - 2001/9/5

N2 - We study the ν=5/2 even-denominator fractional quantum Hall effect (FQHE) over a wide range of magnetic field in a heterojunction insulated gate field-effect transistor (HIGFET). The electron density can be tuned from n=0-7.6×1011 cm-2 with a peak mobility μ=5.5×106 cm2 Vs-1. The ν=5/2 state shows a strong minimum in diagonal resistance and a developing Hall plateau at magnetic fields (B) as high as 12.6 T. The strength of the energy gap varies smoothly with B-field. We interpret these observations as strong evidence for a spin-polarized ground state at ν=5/2.

AB - We study the ν=5/2 even-denominator fractional quantum Hall effect (FQHE) over a wide range of magnetic field in a heterojunction insulated gate field-effect transistor (HIGFET). The electron density can be tuned from n=0-7.6×1011 cm-2 with a peak mobility μ=5.5×106 cm2 Vs-1. The ν=5/2 state shows a strong minimum in diagonal resistance and a developing Hall plateau at magnetic fields (B) as high as 12.6 T. The strength of the energy gap varies smoothly with B-field. We interpret these observations as strong evidence for a spin-polarized ground state at ν=5/2.

KW - C. field-effect transistor

KW - C. two-dimensional electron system

KW - D. quantum Hall effect

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U2 - 10.1016/S0038-1098(01)00311-8

DO - 10.1016/S0038-1098(01)00311-8

M3 - Article

AN - SCOPUS:0035812451

SN - 0038-1098

VL - 119

SP - 641

EP - 645

JO - Solid State Communications

JF - Solid State Communications

IS - 12

ER -

Experimental evidence for a spin-polarized ground state in the ν=5/2 fractional quantum Hall effect

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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