Experimental determination of quantum and centroid capacitance in arsenideantimonide quantum-well MOSFETs incorporating nonparabolicity effect

Ashkar Ali; Himanshu Madan; Rajiv Misra; Ashish Agrawal; Peter Schiffer; J. Brad Boos; Brian R. Bennett; Suman Datta

doi:10.1109/TED.2011.2110652

Experimental determination of quantum and centroid capacitance in arsenideantimonide quantum-well MOSFETs incorporating nonparabolicity effect

Ashkar Ali, Himanshu Madan, Rajiv Misra, Ashish Agrawal, Peter Schiffer, J. Brad Boos, Brian R. Bennett, Suman Datta

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

Experimental gate capacitance C_g versus gate voltage data for InAs_0.8Sb_0.2 quantum-well MOSFET (QW-MOSFET) is analyzed using a physics-based analytical model to obtain the quantum capacitance C _Q and centroid capacitance C_cent. The nonparabolic electronic band structure of the InAs_0.8Sb_0.2 QW is incorporated in the model. The effective mass extracted from Shubnikovde Haas magnetotransport measurements is in excellent agreement with that extracted from capacitance measurements. Our analysis confirms that in the operational range of InAs_0.8Sb_0.2 QW-MOSFETs, quantization and nonparabolicity in the QW enhance C_Q and C_cent. Our quantitative model also provides an accurate estimate of the various contributing factors toward C_g scaling in future arsenideantimonide MOSFETs.

Original language	English (US)
Article number	5723732
Pages (from-to)	1397-1403
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	58
Issue number	5
DOIs	https://doi.org/10.1109/TED.2011.2110652
State	Published - May 2011
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Keywords

Effective mass
high-κ dielectric
InAsSb
interface states
nonparabolicity
quantum capacitance
split capacitance-voltage

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10.1109/TED.2011.2110652

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title = "Experimental determination of quantum and centroid capacitance in arsenideantimonide quantum-well MOSFETs incorporating nonparabolicity effect",

abstract = "Experimental gate capacitance Cg versus gate voltage data for InAs0.8Sb0.2 quantum-well MOSFET (QW-MOSFET) is analyzed using a physics-based analytical model to obtain the quantum capacitance C Q and centroid capacitance Ccent. The nonparabolic electronic band structure of the InAs0.8Sb0.2 QW is incorporated in the model. The effective mass extracted from Shubnikovde Haas magnetotransport measurements is in excellent agreement with that extracted from capacitance measurements. Our analysis confirms that in the operational range of InAs0.8Sb0.2 QW-MOSFETs, quantization and nonparabolicity in the QW enhance CQ and Ccent. Our quantitative model also provides an accurate estimate of the various contributing factors toward Cg scaling in future arsenideantimonide MOSFETs.",

keywords = "Effective mass, high-κ dielectric, InAsSb, interface states, nonparabolicity, quantum capacitance, split capacitance-voltage",

author = "Ashkar Ali and Himanshu Madan and Rajiv Misra and Ashish Agrawal and Peter Schiffer and Boos, {J. Brad} and Bennett, {Brian R.} and Suman Datta",

note = "Funding Information: Manuscript received October 8, 2010; revised January 4, 2011; accepted January 16, 2011. Date of publication March 3, 2011; date of current version April 22, 2011. This work was supported in part by the Focus Center Research Program for Materials, Structures, and Devices sponsored by the Semiconductor Research Corporation and the Defense Advanced Research Projects Agency and in part by the National Science Foundation Materials Research Science and Engineering Centers under Grant DMR 0820404. The review of this paper was arranged by Editor G. Ghione.",

year = "2011",

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doi = "10.1109/TED.2011.2110652",

language = "English (US)",

volume = "58",

pages = "1397--1403",

journal = "IEEE Transactions on Electron Devices",

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T1 - Experimental determination of quantum and centroid capacitance in arsenideantimonide quantum-well MOSFETs incorporating nonparabolicity effect

AU - Ali, Ashkar

AU - Madan, Himanshu

AU - Misra, Rajiv

AU - Agrawal, Ashish

AU - Schiffer, Peter

AU - Boos, J. Brad

AU - Bennett, Brian R.

AU - Datta, Suman

N1 - Funding Information: Manuscript received October 8, 2010; revised January 4, 2011; accepted January 16, 2011. Date of publication March 3, 2011; date of current version April 22, 2011. This work was supported in part by the Focus Center Research Program for Materials, Structures, and Devices sponsored by the Semiconductor Research Corporation and the Defense Advanced Research Projects Agency and in part by the National Science Foundation Materials Research Science and Engineering Centers under Grant DMR 0820404. The review of this paper was arranged by Editor G. Ghione.

PY - 2011/5

Y1 - 2011/5

N2 - Experimental gate capacitance Cg versus gate voltage data for InAs0.8Sb0.2 quantum-well MOSFET (QW-MOSFET) is analyzed using a physics-based analytical model to obtain the quantum capacitance C Q and centroid capacitance Ccent. The nonparabolic electronic band structure of the InAs0.8Sb0.2 QW is incorporated in the model. The effective mass extracted from Shubnikovde Haas magnetotransport measurements is in excellent agreement with that extracted from capacitance measurements. Our analysis confirms that in the operational range of InAs0.8Sb0.2 QW-MOSFETs, quantization and nonparabolicity in the QW enhance CQ and Ccent. Our quantitative model also provides an accurate estimate of the various contributing factors toward Cg scaling in future arsenideantimonide MOSFETs.

AB - Experimental gate capacitance Cg versus gate voltage data for InAs0.8Sb0.2 quantum-well MOSFET (QW-MOSFET) is analyzed using a physics-based analytical model to obtain the quantum capacitance C Q and centroid capacitance Ccent. The nonparabolic electronic band structure of the InAs0.8Sb0.2 QW is incorporated in the model. The effective mass extracted from Shubnikovde Haas magnetotransport measurements is in excellent agreement with that extracted from capacitance measurements. Our analysis confirms that in the operational range of InAs0.8Sb0.2 QW-MOSFETs, quantization and nonparabolicity in the QW enhance CQ and Ccent. Our quantitative model also provides an accurate estimate of the various contributing factors toward Cg scaling in future arsenideantimonide MOSFETs.

KW - Effective mass

KW - high-κ dielectric

KW - InAsSb

KW - interface states

KW - nonparabolicity

KW - quantum capacitance

KW - split capacitance-voltage

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Experimental determination of quantum and centroid capacitance in arsenideantimonide quantum-well MOSFETs incorporating nonparabolicity effect

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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