Abstract
A comprehensive experimental study of the photoluminescence (PL) spectral evolution under a magnetic field (B≤25T) applied perpendicularly to a high-mobility two-dimensional electron gas (2DEG), is performed on modulation-doped GaAs/AlGaAs heterojunctions at TL=0.3K. The abrupt transfer of the free exciton to hole-2DEG PL occurring at integer and fractional filling factors is analyzed in a phenomenological model, wherein free excitons photogenerated in the GaAs layer dissociate into a 2D electron and 3D hole near the 2D-electron channel. Such magnetic field induced exciton-(2De-h) transitions are able to explain the remarkable strong PL anomalies in single hetrojunctions as compared to those observed in modulation-doped quantum wells.
Original language | English (US) |
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Article number | 075332 |
Journal | Physical Review B - Condensed Matter and Materials Physics |
Volume | 72 |
Issue number | 7 |
DOIs | |
State | Published - Aug 15 2005 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics