Exciton states in GaAs/AlGaAs Bragg confining structures studied by resonant Raman scattering

M. Zahler; E. Cohen; J. Salzman; E. Linder; L. N. Pfeiffer

doi:10.1051/jp4:1993571

Exciton states in GaAs/AlGaAs Bragg confining structures studied by resonant Raman scattering

M. Zahler, E. Cohen, J. Salzman, E. Linder, L. N. Pfeiffer

Research output: Contribution to journal › Conference article › peer-review

Abstract

We report on the study of the low temperature resonant Raman scattering (RRS) in GaAs/Al_0.32Ga_0.68As Bragg confining structures (BCS). The LO-phonon RRS is observed in the spectral range of the (e_B:hh_B) and (e_B:lh_B) Bragg confined excitons. The RRS profiles show an outgoing beam resonance that is much stronger than the incoming beam resonance. These profiles are analyzed by a model in which the exciton dimensionality affects the in-plane excitonic dispersion and the Frohlich interaction dependence on the phonon wavevector. The exciton scattering, in its translational motion, is assumed to be due to heavy point defects (short range potential fluctuations). Detailed calculations of the RRS profiles result in excellent agreement with the observed spectra. From them we conclude that the Bragg confined (e_B:hh_B) exciton is approximately 2-dimensional.

Original language	English (US)
Pages (from-to)	343-346
Number of pages	4
Journal	Journal De Physique. IV : JP
Volume	3
Issue number	5
DOIs	https://doi.org/10.1051/jp4:1993571
State	Published - 1993
Externally published	Yes
Event	Proceedings of the Third International Conference on Optics of Excitons in Confined Systems - Montpellier, Fr Duration: Aug 30 1993 → Sep 2 1993

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1051/jp4:1993571

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@article{a6673aa1102449f9896baca35970c1e8,

title = "Exciton states in GaAs/AlGaAs Bragg confining structures studied by resonant Raman scattering",

abstract = "We report on the study of the low temperature resonant Raman scattering (RRS) in GaAs/Al0.32Ga0.68As Bragg confining structures (BCS). The LO-phonon RRS is observed in the spectral range of the (eB:hhB) and (eB:lhB) Bragg confined excitons. The RRS profiles show an outgoing beam resonance that is much stronger than the incoming beam resonance. These profiles are analyzed by a model in which the exciton dimensionality affects the in-plane excitonic dispersion and the Frohlich interaction dependence on the phonon wavevector. The exciton scattering, in its translational motion, is assumed to be due to heavy point defects (short range potential fluctuations). Detailed calculations of the RRS profiles result in excellent agreement with the observed spectra. From them we conclude that the Bragg confined (eB:hhB) exciton is approximately 2-dimensional.",

author = "M. Zahler and E. Cohen and J. Salzman and E. Linder and Pfeiffer, {L. N.}",

year = "1993",

doi = "10.1051/jp4:1993571",

language = "English (US)",

volume = "3",

pages = "343--346",

journal = "Journal De Physique. IV : JP",

issn = "1155-4339",

publisher = "Springer Verlag",

number = "5",

note = "Proceedings of the Third International Conference on Optics of Excitons in Confined Systems ; Conference date: 30-08-1993 Through 02-09-1993",

}

TY - JOUR

T1 - Exciton states in GaAs/AlGaAs Bragg confining structures studied by resonant Raman scattering

AU - Zahler, M.

AU - Cohen, E.

AU - Salzman, J.

AU - Linder, E.

AU - Pfeiffer, L. N.

PY - 1993

Y1 - 1993

N2 - We report on the study of the low temperature resonant Raman scattering (RRS) in GaAs/Al0.32Ga0.68As Bragg confining structures (BCS). The LO-phonon RRS is observed in the spectral range of the (eB:hhB) and (eB:lhB) Bragg confined excitons. The RRS profiles show an outgoing beam resonance that is much stronger than the incoming beam resonance. These profiles are analyzed by a model in which the exciton dimensionality affects the in-plane excitonic dispersion and the Frohlich interaction dependence on the phonon wavevector. The exciton scattering, in its translational motion, is assumed to be due to heavy point defects (short range potential fluctuations). Detailed calculations of the RRS profiles result in excellent agreement with the observed spectra. From them we conclude that the Bragg confined (eB:hhB) exciton is approximately 2-dimensional.

AB - We report on the study of the low temperature resonant Raman scattering (RRS) in GaAs/Al0.32Ga0.68As Bragg confining structures (BCS). The LO-phonon RRS is observed in the spectral range of the (eB:hhB) and (eB:lhB) Bragg confined excitons. The RRS profiles show an outgoing beam resonance that is much stronger than the incoming beam resonance. These profiles are analyzed by a model in which the exciton dimensionality affects the in-plane excitonic dispersion and the Frohlich interaction dependence on the phonon wavevector. The exciton scattering, in its translational motion, is assumed to be due to heavy point defects (short range potential fluctuations). Detailed calculations of the RRS profiles result in excellent agreement with the observed spectra. From them we conclude that the Bragg confined (eB:hhB) exciton is approximately 2-dimensional.

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U2 - 10.1051/jp4:1993571

DO - 10.1051/jp4:1993571

M3 - Conference article

AN - SCOPUS:0027680999

SN - 1155-4339

VL - 3

SP - 343

EP - 346

JO - Journal De Physique. IV : JP

JF - Journal De Physique. IV : JP

IS - 5

T2 - Proceedings of the Third International Conference on Optics of Excitons in Confined Systems

Y2 - 30 August 1993 through 2 September 1993

ER -

Exciton states in GaAs/AlGaAs Bragg confining structures studied by resonant Raman scattering

Abstract

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