Exciton states in GaAs/AlGaAs Bragg confining structures studied by resonant Raman scattering

M. Zahler, E. Cohen, J. Salzman, E. Linder, L. N. Pfeiffer

Research output: Contribution to journalConference articlepeer-review


We report on the study of the low temperature resonant Raman scattering (RRS) in GaAs/Al0.32Ga0.68As Bragg confining structures (BCS). The LO-phonon RRS is observed in the spectral range of the (eB:hhB) and (eB:lhB) Bragg confined excitons. The RRS profiles show an outgoing beam resonance that is much stronger than the incoming beam resonance. These profiles are analyzed by a model in which the exciton dimensionality affects the in-plane excitonic dispersion and the Frohlich interaction dependence on the phonon wavevector. The exciton scattering, in its translational motion, is assumed to be due to heavy point defects (short range potential fluctuations). Detailed calculations of the RRS profiles result in excellent agreement with the observed spectra. From them we conclude that the Bragg confined (eB:hhB) exciton is approximately 2-dimensional.

Original languageEnglish (US)
Pages (from-to)343-346
Number of pages4
JournalJournal De Physique. IV : JP
Issue number5
StatePublished - 1993
Externally publishedYes
EventProceedings of the Third International Conference on Optics of Excitons in Confined Systems - Montpellier, Fr
Duration: Aug 30 1993Sep 2 1993

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy


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