We have used Gutzwiller's variational method to study the metal-insulator transition in a modified Hubbard model with low-lying excited states and one electron per site. Comparison is made with results obtained using conventional band screening arguments. Implications for many-valley semiconductors with and without central-cell effects are discussed.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics