Exchange biasing of the ferromagnetic semiconductor Ga 1-xMn xAs

K. F. Eid, M. B. Stone, K. C. Ku, O. Maksimov, P. Schiffer, N. Samarth, T. C. Shin, C. J. Palmstrøm

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The exchange coupling of the ferromagnetic semiconductor Ga 1-xMn xAs was investigated. A low temperature molecular beam epitaxy was used for the growth of the sample on (001) semi-insulating, epi-ready GaAs substrates. A comparison of the blocking temperature of the antiferromagnet (MnO) and the Curie temperature of the ferromagnet was performed. The dependence of the hysteresis loop parameters on the magnitude of the cooling fields was also investigated. From Rutherford backscattering (RBS) measurements, an increase in the channeling minimum yield, and an enhancement of the Ga channeling interface peak by ∼1×10 15 atoms/cm 2 were observed.

Original languageEnglish (US)
Pages (from-to)1556-1558
Number of pages3
JournalApplied Physics Letters
Issue number9
StatePublished - Aug 30 2004
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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