TY - JOUR
T1 - Evolution of the Valley Position in Bulk Transition-Metal Chalcogenides and Their Monolayer Limit
AU - Yuan, Hongtao
AU - Liu, Zhongkai
AU - Xu, Gang
AU - Zhou, Bo
AU - Wu, Sanfeng
AU - Dumcenco, Dumitru
AU - Yan, Kai
AU - Zhang, Yi
AU - Mo, Sung Kwan
AU - Dudin, Pavel
AU - Kandyba, Victor
AU - Yablonskikh, Mikhail
AU - Barinov, Alexei
AU - Shen, Zhixun
AU - Zhang, Shoucheng
AU - Huang, Yingsheng
AU - Xu, Xiaodong
AU - Hussain, Zahid
AU - Hwang, Harold Y.
AU - Cui, Yi
AU - Chen, Yulin
N1 - Publisher Copyright:
© 2016 American Chemical Society.
PY - 2016/8/10
Y1 - 2016/8/10
N2 - Layered transition metal chalcogenides with large spin orbit coupling have recently sparked much interest due to their potential applications for electronic, optoelectronic, spintronics, and valleytronics. However, most current understanding of the electronic structure near band valleys in momentum space is based on either theoretical investigations or optical measurements, leaving the detailed band structure elusive. For example, the exact position of the conduction band valley of bulk MoS2 remains controversial. Here, using angle-resolved photoemission spectroscopy with submicron spatial resolution (micro-ARPES), we systematically imaged the conduction/valence band structure evolution across representative chalcogenides MoS2, WS2, and WSe2, as well as the thickness dependent electronic structure from bulk to the monolayer limit. These results establish a solid basis to understand the underlying valley physics of these materials, and also provide a link between chalcogenide electronic band structure and their physical properties for potential valleytronics applications.
AB - Layered transition metal chalcogenides with large spin orbit coupling have recently sparked much interest due to their potential applications for electronic, optoelectronic, spintronics, and valleytronics. However, most current understanding of the electronic structure near band valleys in momentum space is based on either theoretical investigations or optical measurements, leaving the detailed band structure elusive. For example, the exact position of the conduction band valley of bulk MoS2 remains controversial. Here, using angle-resolved photoemission spectroscopy with submicron spatial resolution (micro-ARPES), we systematically imaged the conduction/valence band structure evolution across representative chalcogenides MoS2, WS2, and WSe2, as well as the thickness dependent electronic structure from bulk to the monolayer limit. These results establish a solid basis to understand the underlying valley physics of these materials, and also provide a link between chalcogenide electronic band structure and their physical properties for potential valleytronics applications.
KW - angle-resolved photoemission spectroscopy
KW - band structure
KW - transition metal dichalcogenides
KW - valleytronics
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U2 - 10.1021/acs.nanolett.5b05107
DO - 10.1021/acs.nanolett.5b05107
M3 - Article
C2 - 27357620
AN - SCOPUS:84981499974
SN - 1530-6984
VL - 16
SP - 4738
EP - 4745
JO - Nano Letters
JF - Nano Letters
IS - 8
ER -