Evolution of the Valley Position in Bulk Transition-Metal Chalcogenides and Their Monolayer Limit

Hongtao Yuan, Zhongkai Liu, Gang Xu, Bo Zhou, Sanfeng Wu, Dumitru Dumcenco, Kai Yan, Yi Zhang, Sung Kwan Mo, Pavel Dudin, Victor Kandyba, Mikhail Yablonskikh, Alexei Barinov, Zhixun Shen, Shoucheng Zhang, Yingsheng Huang, Xiaodong Xu, Zahid Hussain, Harold Y. Hwang, Yi CuiYulin Chen

Research output: Contribution to journalArticlepeer-review

82 Scopus citations


Layered transition metal chalcogenides with large spin orbit coupling have recently sparked much interest due to their potential applications for electronic, optoelectronic, spintronics, and valleytronics. However, most current understanding of the electronic structure near band valleys in momentum space is based on either theoretical investigations or optical measurements, leaving the detailed band structure elusive. For example, the exact position of the conduction band valley of bulk MoS2 remains controversial. Here, using angle-resolved photoemission spectroscopy with submicron spatial resolution (micro-ARPES), we systematically imaged the conduction/valence band structure evolution across representative chalcogenides MoS2, WS2, and WSe2, as well as the thickness dependent electronic structure from bulk to the monolayer limit. These results establish a solid basis to understand the underlying valley physics of these materials, and also provide a link between chalcogenide electronic band structure and their physical properties for potential valleytronics applications.

Original languageEnglish (US)
Pages (from-to)4738-4745
Number of pages8
JournalNano Letters
Issue number8
StatePublished - Aug 10 2016
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Chemistry
  • Condensed Matter Physics
  • Mechanical Engineering
  • Bioengineering
  • General Materials Science


  • angle-resolved photoemission spectroscopy
  • band structure
  • transition metal dichalcogenides
  • valleytronics


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