Evidence for an excited level of the neutral indium acceptor in silicon

K. R. Elliott, S. A. Lyon, D. L. Smith, T. C. McGill

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

On the basis of the dependence of the photoluminescence on pump power, indium concentration and temperature we have determined that an excited level of the neutral indium acceptor exists 4.1 ± 0.1 meV above the ground state.

Original languageEnglish (US)
Pages (from-to)52-54
Number of pages3
JournalPhysics Letters A
Volume70
Issue number1
DOIs
StatePublished - Feb 5 1979
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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