Evidence for an excited level of the neutral indium acceptor in silicon

K. R. Elliott; S. A. Lyon; D. L. Smith; T. C. McGill

doi:10.1016/0375-9601(79)90325-6

Evidence for an excited level of the neutral indium acceptor in silicon

K. R. Elliott, S. A. Lyon, D. L. Smith, T. C. McGill

Research output: Contribution to journal › Article › peer-review

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Abstract

On the basis of the dependence of the photoluminescence on pump power, indium concentration and temperature we have determined that an excited level of the neutral indium acceptor exists 4.1 ± 0.1 meV above the ground state.

Original language	English (US)
Pages (from-to)	52-54
Number of pages	3
Journal	Physics Letters A
Volume	70
Issue number	1
DOIs	https://doi.org/10.1016/0375-9601(79)90325-6
State	Published - Feb 5 1979
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1016/0375-9601(79)90325-6

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@article{57472fed4372438e94442e5bfe89bcbb,

title = "Evidence for an excited level of the neutral indium acceptor in silicon",

abstract = "On the basis of the dependence of the photoluminescence on pump power, indium concentration and temperature we have determined that an excited level of the neutral indium acceptor exists 4.1 ± 0.1 meV above the ground state.",

author = "Elliott, {K. R.} and Lyon, {S. A.} and Smith, {D. L.} and McGill, {T. C.}",

note = "Funding Information: * Work supported in paxt by Advanced Research Projects Agency under contract no. DAAK7O-77-C-0082.",

year = "1979",

month = feb,

day = "5",

doi = "10.1016/0375-9601(79)90325-6",

language = "English (US)",

volume = "70",

pages = "52--54",

journal = "Physics Letters A",

issn = "0375-9601",

publisher = "Elsevier",

number = "1",

}

TY - JOUR

T1 - Evidence for an excited level of the neutral indium acceptor in silicon

AU - Elliott, K. R.

AU - Lyon, S. A.

AU - Smith, D. L.

AU - McGill, T. C.

N1 - Funding Information: * Work supported in paxt by Advanced Research Projects Agency under contract no. DAAK7O-77-C-0082.

PY - 1979/2/5

Y1 - 1979/2/5

N2 - On the basis of the dependence of the photoluminescence on pump power, indium concentration and temperature we have determined that an excited level of the neutral indium acceptor exists 4.1 ± 0.1 meV above the ground state.

AB - On the basis of the dependence of the photoluminescence on pump power, indium concentration and temperature we have determined that an excited level of the neutral indium acceptor exists 4.1 ± 0.1 meV above the ground state.

UR - http://www.scopus.com/inward/record.url?scp=49249143666&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=49249143666&partnerID=8YFLogxK

U2 - 10.1016/0375-9601(79)90325-6

DO - 10.1016/0375-9601(79)90325-6

M3 - Article

AN - SCOPUS:49249143666

SN - 0375-9601

VL - 70

SP - 52

EP - 54

JO - Physics Letters A

JF - Physics Letters A

IS - 1

ER -

Evidence for an excited level of the neutral indium acceptor in silicon

Abstract

All Science Journal Classification (ASJC) codes

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