Evaluation of a novel Cu(I) precursor for chemical vapor deposition

D. X. Ye, B. Carrow, S. Pimanpang, H. Bakhru, G. A.Ten Eyck, G. C. Wang, T. M. Lu

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


We have synthesized and investigated a novel precursor, {2-(Me 3Si)2C(Cu)C5H4N}2, (1), for chemical vapor deposition (CVD) of Cu thin films using H2 as a reducing agent. The alkyl compound (1) is thermally stable but sublimable when heated in a vacuum. Cu was selectively deposited on Si(100) substrate with Pd as a seed layer. X-ray photoelectron spectroscopy showed that a pure Cu film was deposited on the Pd seed layer at 250°C, and the film is clean in terms of possible contaminants. Thus the Cu(I) alkyl compound is suitable for CVD.

Original languageEnglish (US)
Pages (from-to)C85-C88
JournalElectrochemical and Solid-State Letters
Issue number7
StatePublished - 2005

All Science Journal Classification (ASJC) codes

  • General Chemical Engineering
  • General Materials Science
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering


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