Evaluation of a novel Cu(I) precursor for chemical vapor deposition

D. X. Ye; B. Carrow; S. Pimanpang; H. Bakhru; G. A.Ten Eyck; G. C. Wang; T. M. Lu

doi:10.1149/1.1922868

Evaluation of a novel Cu(I) precursor for chemical vapor deposition

D. X. Ye, B. Carrow, S. Pimanpang, H. Bakhru, G. A.Ten Eyck, G. C. Wang, T. M. Lu

Chemistry

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3 Scopus citations

Abstract

We have synthesized and investigated a novel precursor, {2-(Me ₃Si)₂C(Cu)C₅H₄N}₂, (1), for chemical vapor deposition (CVD) of Cu thin films using H₂ as a reducing agent. The alkyl compound (1) is thermally stable but sublimable when heated in a vacuum. Cu was selectively deposited on Si(100) substrate with Pd as a seed layer. X-ray photoelectron spectroscopy showed that a pure Cu film was deposited on the Pd seed layer at 250°C, and the film is clean in terms of possible contaminants. Thus the Cu(I) alkyl compound is suitable for CVD.

Original language	English (US)
Pages (from-to)	C85-C88
Journal	Electrochemical and Solid-State Letters
Volume	8
Issue number	7
DOIs	https://doi.org/10.1149/1.1922868
State	Published - 2005

All Science Journal Classification (ASJC) codes

General Chemical Engineering
General Materials Science
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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title = "Evaluation of a novel Cu(I) precursor for chemical vapor deposition",

abstract = "We have synthesized and investigated a novel precursor, {2-(Me 3Si)2C(Cu)C5H4N}2, (1), for chemical vapor deposition (CVD) of Cu thin films using H2 as a reducing agent. The alkyl compound (1) is thermally stable but sublimable when heated in a vacuum. Cu was selectively deposited on Si(100) substrate with Pd as a seed layer. X-ray photoelectron spectroscopy showed that a pure Cu film was deposited on the Pd seed layer at 250°C, and the film is clean in terms of possible contaminants. Thus the Cu(I) alkyl compound is suitable for CVD.",

author = "Ye, {D. X.} and B. Carrow and S. Pimanpang and H. Bakhru and Eyck, {G. A.Ten} and Wang, {G. C.} and Lu, {T. M.}",

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doi = "10.1149/1.1922868",

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T1 - Evaluation of a novel Cu(I) precursor for chemical vapor deposition

AU - Ye, D. X.

AU - Carrow, B.

AU - Pimanpang, S.

AU - Bakhru, H.

AU - Eyck, G. A.Ten

AU - Wang, G. C.

AU - Lu, T. M.

PY - 2005

Y1 - 2005

N2 - We have synthesized and investigated a novel precursor, {2-(Me 3Si)2C(Cu)C5H4N}2, (1), for chemical vapor deposition (CVD) of Cu thin films using H2 as a reducing agent. The alkyl compound (1) is thermally stable but sublimable when heated in a vacuum. Cu was selectively deposited on Si(100) substrate with Pd as a seed layer. X-ray photoelectron spectroscopy showed that a pure Cu film was deposited on the Pd seed layer at 250°C, and the film is clean in terms of possible contaminants. Thus the Cu(I) alkyl compound is suitable for CVD.

AB - We have synthesized and investigated a novel precursor, {2-(Me 3Si)2C(Cu)C5H4N}2, (1), for chemical vapor deposition (CVD) of Cu thin films using H2 as a reducing agent. The alkyl compound (1) is thermally stable but sublimable when heated in a vacuum. Cu was selectively deposited on Si(100) substrate with Pd as a seed layer. X-ray photoelectron spectroscopy showed that a pure Cu film was deposited on the Pd seed layer at 250°C, and the film is clean in terms of possible contaminants. Thus the Cu(I) alkyl compound is suitable for CVD.

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JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

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ER -

Evaluation of a novel Cu(I) precursor for chemical vapor deposition

Abstract

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