Efpinning at the Sn/GaAs(110) interface

K. Stiles, A. Kahn, D. Kilday, J. McKinley, G. Marqaritondo

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16 Scopus citations


In this study, Sn/GaAs interfaces are studied at both room temperature (RT) and low temperature (LT) (70–100 K) using soft x-ray and ultraviolet photoemission spectroscopies and low-energy electron diffraction. The movement of the Fermi level EF on the RT surface as a function of Sn coverage is initially slow on n-GaAs and fast on p-GaAs. This asymmetry is typically found only at LT for other metal/GaAs interfaces, where it is related to the delayed onset of metallic behavior of the overlayer. In contrast to these other systems, however, Sn/GaAs gives a classic example of Stranski-Krastanov growth at RT. The first two-dimensional layer does not bring EF close to its final position on n-GaAs. At the onset of three-dimensional nucleation (3-4 A), ef drops abruptly to its final position on n-GaAs. This drop is delayed to ~ 5 A at LT. As for Ag and Au/GaAs, this relatively sharp change in the position ofEFappears to be related to the formation of clusters and the appearance of the metallic behavior of the overlayer.

Original languageEnglish (US)
Pages (from-to)1462-1465
Number of pages4
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number3
StatePublished - May 1988

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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