We have studied the ESR properties of three compensated n-type Si:P,B samples ner the metal-insulator transition covering the low-temperature regime from 30 mK to 10 K. We find that both the susceptibility and the ESR linewidth increase dramatically as the temperature is lowered, and in the metallic Si:P,B samples the susceptibility increase is more than in similar uncompensated Si:P samples. We compare results for the insulating phase with numerical calculations, then discuss the metallic region in light of various theoretical models for the low-temperature thermodynamic behavior.
|Original language||English (US)|
|Number of pages||4|
|Journal||Physical review letters|
|State||Published - Jan 1 1992|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)