ESR studies of compensated Si:P,B near the metal-insulator transition

M. J. Hirsch, D. F. Holcomb, R. N. Bhatt, M. A. Paalanen

Research output: Contribution to journalArticle

45 Scopus citations

Abstract

We have studied the ESR properties of three compensated n-type Si:P,B samples ner the metal-insulator transition covering the low-temperature regime from 30 mK to 10 K. We find that both the susceptibility and the ESR linewidth increase dramatically as the temperature is lowered, and in the metallic Si:P,B samples the susceptibility increase is more than in similar uncompensated Si:P samples. We compare results for the insulating phase with numerical calculations, then discuss the metallic region in light of various theoretical models for the low-temperature thermodynamic behavior.

Original languageEnglish (US)
Pages (from-to)1418-1421
Number of pages4
JournalPhysical review letters
Volume68
Issue number9
DOIs
StatePublished - Jan 1 1992

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'ESR studies of compensated Si:P,B near the metal-insulator transition'. Together they form a unique fingerprint.

  • Cite this