ESR studies of compensated Si:P,B near the metal-insulator transition

M. J. Hirsch, D. F. Holcomb, R. N. Bhatt, M. A. Paalanen

Research output: Contribution to journalArticlepeer-review

46 Scopus citations


We have studied the ESR properties of three compensated n-type Si:P,B samples ner the metal-insulator transition covering the low-temperature regime from 30 mK to 10 K. We find that both the susceptibility and the ESR linewidth increase dramatically as the temperature is lowered, and in the metallic Si:P,B samples the susceptibility increase is more than in similar uncompensated Si:P samples. We compare results for the insulating phase with numerical calculations, then discuss the metallic region in light of various theoretical models for the low-temperature thermodynamic behavior.

Original languageEnglish (US)
Pages (from-to)1418-1421
Number of pages4
JournalPhysical review letters
Issue number9
StatePublished - 1992

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy


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