Erratum: Effect of substrate temperature on migration of Si in planar-doped GaAs (Applied Physics Letters (1988) 53, (2504))

M. Santos, T. Sajoto, A. Zrenner, M. Shayegan

Research output: Contribution to journalComment/debate

5 Scopus citations
Original languageEnglish (US)
Number of pages1
JournalApplied Physics Letters
Volume55
Issue number6
DOIs
StatePublished - Dec 1 1989

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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