Erratum: A room-temperature silicon single-electron metal–oxide–semiconductor memory with nanoscale floating-gate and ultranarrow channel (Appl. Phys. Lett. (1997) 70(7) (850–852) (10.1063/1.118236))

Lingjie Guo, Effendi Leobandung, Stephen Y. Chou

Research output: Contribution to journalComment/debatepeer-review

Original languageEnglish (US)
Number of pages1
JournalApplied Physics Letters
Volume71
Issue number4
DOIs
StatePublished - Jul 28 1997
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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