TY - JOUR
T1 - Erbium-implanted materials for quantum communication applications
AU - Stevenson, Paul
AU - Phenicie, Christopher M.
AU - Gray, Isaiah
AU - Horvath, Sebastian P.
AU - Welinski, Sacha
AU - Ferrenti, Austin M.
AU - Ferrier, Alban
AU - Goldner, Philippe
AU - Das, Sujit
AU - Ramesh, Ramamoorthy
AU - Cava, Robert J.
AU - De Leon, Nathalie P.
AU - Thompson, Jeff D.
N1 - Funding Information:
Funding for this research was provided by the AFOSR (Contract No. FA9550-18-1-0334), the Eric and Wendy Schmidt Transformative Technology Fund at Princeton University, and the Princeton Catalysis Initiative. The materials processing work was supported by the U.S. Department of Energy, Office of Science, National Quantum Information Science Research Centers, Co-design Center for Quantum Advantage (C2QA) under Contract No. DE-SC0012704. P.G. acknowledges funding from ANR Mirespin project, Grant ANR-19-CE47- 0011 of the French Agence Nationale de la Recherche. The work at UC Berkeley was supported by the Center for Probabilistic Spin Logic for Low-Energy Boolean and Non-Boolean Computing (CAPSL), one of the Nanoelectronic Computing Research (nCORE) Centers as task 2759.002, and a Semiconductor Research Corporation (SRC) program sponsored by the NSF through CCF 1739635.
Publisher Copyright:
© 2022 American Physical Society.
PY - 2022/6/1
Y1 - 2022/6/1
N2 - Erbium-doped materials can serve as spin-photon interfaces with optical transitions in the telecom C band, making them an exciting class of materials for long-distance quantum communication. However, the spin and optical coherence times of Er3+ ions are limited by currently available host materials, motivating the development of new Er3+-containing materials. Here we demonstrate the use of ion implantation to efficiently screen prospective host candidates, and show that disorder introduced by ion implantation can be mitigated through post-implantation thermal processing to achieve inhomogeneous linewidths comparable to bulk linewidths in as-grown samples. We present optical spectroscopy data for each host material, which allows us to determine the level structure of each site, allowing us to compare the environments of Er3+ introduced via implantation and via doping during growth. We demonstrate that implantation can generate a range of local environments for Er3+, including those observed in bulk-doped materials, and that the populations of these sites can be controlled with thermal processing.
AB - Erbium-doped materials can serve as spin-photon interfaces with optical transitions in the telecom C band, making them an exciting class of materials for long-distance quantum communication. However, the spin and optical coherence times of Er3+ ions are limited by currently available host materials, motivating the development of new Er3+-containing materials. Here we demonstrate the use of ion implantation to efficiently screen prospective host candidates, and show that disorder introduced by ion implantation can be mitigated through post-implantation thermal processing to achieve inhomogeneous linewidths comparable to bulk linewidths in as-grown samples. We present optical spectroscopy data for each host material, which allows us to determine the level structure of each site, allowing us to compare the environments of Er3+ introduced via implantation and via doping during growth. We demonstrate that implantation can generate a range of local environments for Er3+, including those observed in bulk-doped materials, and that the populations of these sites can be controlled with thermal processing.
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U2 - 10.1103/PhysRevB.105.224106
DO - 10.1103/PhysRevB.105.224106
M3 - Article
AN - SCOPUS:85131942371
SN - 2469-9950
VL - 105
JO - Physical Review B
JF - Physical Review B
IS - 22
M1 - 224106
ER -