Epitaxial growth of VO2 by periodic annealing

J. W. Tashman; J. H. Lee; H. Paik; J. A. Moyer; R. Misra; J. A. Mundy; T. Spila; T. A. Merz; J. Schubert; D. A. Muller; P. Schiffer; D. G. Schlom

doi:10.1063/1.4864404

Epitaxial growth of VO₂ by periodic annealing

J. W. Tashman, J. H. Lee, H. Paik, J. A. Moyer, R. Misra, J. A. Mundy, T. Spila, T. A. Merz, J. Schubert, D. A. Muller, P. Schiffer, D. G. Schlom

Research output: Contribution to journal › Article › peer-review

51 Scopus citations

Abstract

We report the growth of ultrathin VO₂ films on rutile TiO₂ (001) substrates via reactive molecular-beam epitaxy. The films were formed by the cyclical deposition of amorphous vanadium and its subsequent oxidation and transformation to VO₂ via solid-phase epitaxy. Significant metal-insulator transitions were observed in films as thin as 2.3nm, where a resistance change ΔR/R of 25 was measured. Low angle annular dark field scanning transmission electron microscopy was used in conjunction with electron energy loss spectroscopy to study the film/substrate interface and revealed the vanadium to be tetravalent and the titanium interdiffusion to be limited to 1.6nm.

Original language	English (US)
Article number	063104
Journal	Applied Physics Letters
Volume	104
Issue number	6
DOIs	https://doi.org/10.1063/1.4864404
State	Published - Oct 2 2014
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.4864404

Cite this

@article{bafefea328354e80b32c1142bdcb6fb5,

title = "Epitaxial growth of VO2 by periodic annealing",

abstract = "We report the growth of ultrathin VO2 films on rutile TiO2 (001) substrates via reactive molecular-beam epitaxy. The films were formed by the cyclical deposition of amorphous vanadium and its subsequent oxidation and transformation to VO2 via solid-phase epitaxy. Significant metal-insulator transitions were observed in films as thin as 2.3nm, where a resistance change ΔR/R of 25 was measured. Low angle annular dark field scanning transmission electron microscopy was used in conjunction with electron energy loss spectroscopy to study the film/substrate interface and revealed the vanadium to be tetravalent and the titanium interdiffusion to be limited to 1.6nm.",

author = "Tashman, {J. W.} and Lee, {J. H.} and H. Paik and Moyer, {J. A.} and R. Misra and Mundy, {J. A.} and T. Spila and Merz, {T. A.} and J. Schubert and Muller, {D. A.} and P. Schiffer and Schlom, {D. G.}",

note = "Publisher Copyright: {\textcopyright} 2014 AIP Publishing LLC.",

year = "2014",

month = oct,

day = "2",

doi = "10.1063/1.4864404",

language = "English (US)",

volume = "104",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "6",

}

TY - JOUR

T1 - Epitaxial growth of VO2 by periodic annealing

AU - Tashman, J. W.

AU - Lee, J. H.

AU - Paik, H.

AU - Moyer, J. A.

AU - Misra, R.

AU - Mundy, J. A.

AU - Spila, T.

AU - Merz, T. A.

AU - Schubert, J.

AU - Muller, D. A.

AU - Schiffer, P.

AU - Schlom, D. G.

PY - 2014/10/2

Y1 - 2014/10/2

N2 - We report the growth of ultrathin VO2 films on rutile TiO2 (001) substrates via reactive molecular-beam epitaxy. The films were formed by the cyclical deposition of amorphous vanadium and its subsequent oxidation and transformation to VO2 via solid-phase epitaxy. Significant metal-insulator transitions were observed in films as thin as 2.3nm, where a resistance change ΔR/R of 25 was measured. Low angle annular dark field scanning transmission electron microscopy was used in conjunction with electron energy loss spectroscopy to study the film/substrate interface and revealed the vanadium to be tetravalent and the titanium interdiffusion to be limited to 1.6nm.

AB - We report the growth of ultrathin VO2 films on rutile TiO2 (001) substrates via reactive molecular-beam epitaxy. The films were formed by the cyclical deposition of amorphous vanadium and its subsequent oxidation and transformation to VO2 via solid-phase epitaxy. Significant metal-insulator transitions were observed in films as thin as 2.3nm, where a resistance change ΔR/R of 25 was measured. Low angle annular dark field scanning transmission electron microscopy was used in conjunction with electron energy loss spectroscopy to study the film/substrate interface and revealed the vanadium to be tetravalent and the titanium interdiffusion to be limited to 1.6nm.

UR - http://www.scopus.com/inward/record.url?scp=84903947854&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84903947854&partnerID=8YFLogxK

U2 - 10.1063/1.4864404

DO - 10.1063/1.4864404

M3 - Article

AN - SCOPUS:84903947854

SN - 0003-6951

VL - 104

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

M1 - 063104

ER -

Epitaxial growth of VO₂ by periodic annealing

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this