Abstract
Epitaxial layers of the ionic zinc blende compound CuCl are grown on the (110) surface of GaP. The growth is performed by congruent evaporation from a single CuCl source. Surface and interface properties of CuCl/GaP are studied with Auger electron spectroscopy, ultraviolet and x-ray photoemission spectroscopy, electron energy-loss spectroscopy, and low-energy electron diffraction. The interface formed at 100 °C is abrupt, but undergoes a massive chemical reaction which leads to the formation of a copper phosphide layer at high temperature (>300 °C). The valence band discontinuity is 0.85 eV ±0.15 at the abrupt CuCl/GaP interface. The CuCI( 110) surface is atomically ordered and exhibits a (lXl) unit cell. Its atomic geometry is determined by multiple scattering analysis of low-energy electron diffraction intensities. The surface is found to be relaxed in a way which is entirely compatible with the “universal” structure of cleavage surfaces of tetrahedrally coordinated III-V and II-VI compound semiconductors.
Original language | English (US) |
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Pages (from-to) | 2071-2076 |
Number of pages | 6 |
Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
Volume | 10 |
Issue number | 4 |
DOIs | |
State | Published - Jul 1992 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films