Epitaxial growth and characterization of CuCI(110)/GaP(110)

W. Chen, M. Dumas, S. Ahsan, A. Kahn, A. Paton

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Abstract

Epitaxial layers of the ionic zinc blende compound CuCl are grown on the (110) surface of GaP. The growth is performed by congruent evaporation from a single CuCl source. Surface and interface properties of CuCl/GaP are studied with Auger electron spectroscopy, ultraviolet and x-ray photoemission spectroscopy, electron energy-loss spectroscopy, and low-energy electron diffraction. The interface formed at 100 °C is abrupt, but undergoes a massive chemical reaction which leads to the formation of a copper phosphide layer at high temperature (>300 °C). The valence band discontinuity is 0.85 eV ±0.15 at the abrupt CuCl/GaP interface. The CuCI( 110) surface is atomically ordered and exhibits a (lXl) unit cell. Its atomic geometry is determined by multiple scattering analysis of low-energy electron diffraction intensities. The surface is found to be relaxed in a way which is entirely compatible with the “universal” structure of cleavage surfaces of tetrahedrally coordinated III-V and II-VI compound semiconductors.

Original languageEnglish (US)
Pages (from-to)2071-2076
Number of pages6
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume10
Issue number4
DOIs
StatePublished - Jul 1992

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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