Enhancement of high-temperature photoluminescence in strained Si 1-xGex/Si heterostructures by surface passivation

A. St. Amour, J. C. Sturm, Y. Lacroix, M. L.W. Thewalt

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The photoluminescence from strained Si1-xGex alloy quantum wells on Si(100) has been measured from 6 to 300 K. It is shown that the high-temperature photoluminescence of Si1-xGex quantum wells can be increased by over an order of magnitude by passivation of the top silicon surface. Through experiments and a model, it is clearly demonstrated that the decay of the Si1-xGex photoluminescence at high temperature is controlled by surface recombination, not by an intrinsic property of Si1-xGex. By applying proper conditions, nearly constant Si1-xGex photoluminescence can be achieved from 77 to 250 K.

Original languageEnglish (US)
Pages (from-to)3344-3346
Number of pages3
JournalApplied Physics Letters
Issue number26
StatePublished - 1994

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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