The photoluminescence from strained Si1-xGex alloy quantum wells on Si(100) has been measured from 6 to 300 K. It is shown that the high-temperature photoluminescence of Si1-xGex quantum wells can be increased by over an order of magnitude by passivation of the top silicon surface. Through experiments and a model, it is clearly demonstrated that the decay of the Si1-xGex photoluminescence at high temperature is controlled by surface recombination, not by an intrinsic property of Si1-xGex. By applying proper conditions, nearly constant Si1-xGex photoluminescence can be achieved from 77 to 250 K.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - 1994|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)