Enhancement of high-temperature photoluminescence in strained Si 1-xGex/Si heterostructures by surface passivation

A. St. Amour; J. C. Sturm; Y. Lacroix; M. L.W. Thewalt

doi:10.1063/1.112386

Enhancement of high-temperature photoluminescence in strained Si _1-xGe_x/Si heterostructures by surface passivation

A. St. Amour, J. C. Sturm, Y. Lacroix, M. L.W. Thewalt

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Abstract

The photoluminescence from strained Si_1-xGe_x alloy quantum wells on Si(100) has been measured from 6 to 300 K. It is shown that the high-temperature photoluminescence of Si_1-xGe_x quantum wells can be increased by over an order of magnitude by passivation of the top silicon surface. Through experiments and a model, it is clearly demonstrated that the decay of the Si_1-xGe_x photoluminescence at high temperature is controlled by surface recombination, not by an intrinsic property of Si_1-xGe_x. By applying proper conditions, nearly constant Si_1-xGe_x photoluminescence can be achieved from 77 to 250 K.

Original language	English (US)
Pages (from-to)	3344-3346
Number of pages	3
Journal	Applied Physics Letters
Volume	65
Issue number	26
DOIs	https://doi.org/10.1063/1.112386
State	Published - 1994

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.112386

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title = "Enhancement of high-temperature photoluminescence in strained Si 1-xGex/Si heterostructures by surface passivation",

abstract = "The photoluminescence from strained Si1-xGex alloy quantum wells on Si(100) has been measured from 6 to 300 K. It is shown that the high-temperature photoluminescence of Si1-xGex quantum wells can be increased by over an order of magnitude by passivation of the top silicon surface. Through experiments and a model, it is clearly demonstrated that the decay of the Si1-xGex photoluminescence at high temperature is controlled by surface recombination, not by an intrinsic property of Si1-xGex. By applying proper conditions, nearly constant Si1-xGex photoluminescence can be achieved from 77 to 250 K.",

author = "{St. Amour}, A. and Sturm, {J. C.} and Y. Lacroix and Thewalt, {M. L.W.}",

year = "1994",

doi = "10.1063/1.112386",

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T1 - Enhancement of high-temperature photoluminescence in strained Si 1-xGex/Si heterostructures by surface passivation

AU - St. Amour, A.

AU - Sturm, J. C.

AU - Lacroix, Y.

AU - Thewalt, M. L.W.

PY - 1994

Y1 - 1994

N2 - The photoluminescence from strained Si1-xGex alloy quantum wells on Si(100) has been measured from 6 to 300 K. It is shown that the high-temperature photoluminescence of Si1-xGex quantum wells can be increased by over an order of magnitude by passivation of the top silicon surface. Through experiments and a model, it is clearly demonstrated that the decay of the Si1-xGex photoluminescence at high temperature is controlled by surface recombination, not by an intrinsic property of Si1-xGex. By applying proper conditions, nearly constant Si1-xGex photoluminescence can be achieved from 77 to 250 K.

AB - The photoluminescence from strained Si1-xGex alloy quantum wells on Si(100) has been measured from 6 to 300 K. It is shown that the high-temperature photoluminescence of Si1-xGex quantum wells can be increased by over an order of magnitude by passivation of the top silicon surface. Through experiments and a model, it is clearly demonstrated that the decay of the Si1-xGex photoluminescence at high temperature is controlled by surface recombination, not by an intrinsic property of Si1-xGex. By applying proper conditions, nearly constant Si1-xGex photoluminescence can be achieved from 77 to 250 K.

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JF - Applied Physics Letters

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Enhancement of high-temperature photoluminescence in strained Si _1-xGe_x/Si heterostructures by surface passivation

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