Enhanced hole injection in a polymer light emitting diode using a small molecule monolayer bound to the anode

Jing Guo; Norbert Koch; Steven L. Bernasek; Jeffrey Schwartz

doi:10.1016/j.cplett.2006.05.129

Enhanced hole injection in a polymer light emitting diode using a small molecule monolayer bound to the anode

Jing Guo, Norbert Koch, Steven L. Bernasek, Jeffrey Schwartz

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

A monolayer of quarterthiophene-2-phosphonate (4TP) was chemically bound to the surface of indium tin oxide (ITO) and was then p-doped with the strong acceptor, tetrafluorotetracyanoquinodimethane (F₄-TCNQ). This interface modification strongly reduced the barrier for hole injection compared to unmodified ITO. This doped monolayer surface treatment was also superior to the commonly used anode coating poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid) (PEDOT:PPS) at driving voltages above 5.2 V.

Original language	English (US)
Pages (from-to)	370-373
Number of pages	4
Journal	Chemical Physics Letters
Volume	426
Issue number	4-6
DOIs	https://doi.org/10.1016/j.cplett.2006.05.129
State	Published - Aug 4 2006

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)
Physical and Theoretical Chemistry

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title = "Enhanced hole injection in a polymer light emitting diode using a small molecule monolayer bound to the anode",

abstract = "A monolayer of quarterthiophene-2-phosphonate (4TP) was chemically bound to the surface of indium tin oxide (ITO) and was then p-doped with the strong acceptor, tetrafluorotetracyanoquinodimethane (F4-TCNQ). This interface modification strongly reduced the barrier for hole injection compared to unmodified ITO. This doped monolayer surface treatment was also superior to the commonly used anode coating poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid) (PEDOT:PPS) at driving voltages above 5.2 V.",

author = "Jing Guo and Norbert Koch and Bernasek, {Steven L.} and Jeffrey Schwartz",

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language = "English (US)",

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journal = "Chemical Physics Letters",

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T1 - Enhanced hole injection in a polymer light emitting diode using a small molecule monolayer bound to the anode

AU - Guo, Jing

AU - Koch, Norbert

AU - Bernasek, Steven L.

AU - Schwartz, Jeffrey

PY - 2006/8/4

Y1 - 2006/8/4

N2 - A monolayer of quarterthiophene-2-phosphonate (4TP) was chemically bound to the surface of indium tin oxide (ITO) and was then p-doped with the strong acceptor, tetrafluorotetracyanoquinodimethane (F4-TCNQ). This interface modification strongly reduced the barrier for hole injection compared to unmodified ITO. This doped monolayer surface treatment was also superior to the commonly used anode coating poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid) (PEDOT:PPS) at driving voltages above 5.2 V.

AB - A monolayer of quarterthiophene-2-phosphonate (4TP) was chemically bound to the surface of indium tin oxide (ITO) and was then p-doped with the strong acceptor, tetrafluorotetracyanoquinodimethane (F4-TCNQ). This interface modification strongly reduced the barrier for hole injection compared to unmodified ITO. This doped monolayer surface treatment was also superior to the commonly used anode coating poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid) (PEDOT:PPS) at driving voltages above 5.2 V.

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SP - 370

EP - 373

JO - Chemical Physics Letters

JF - Chemical Physics Letters

SN - 0009-2614

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