Enhanced hole injection in a polymer light emitting diode using a small molecule monolayer bound to the anode

Jing Guo; Norbert Koch; Steven L. Bernasek; Jeffrey Schwartz

doi:10.1016/j.cplett.2006.05.129

Enhanced hole injection in a polymer light emitting diode using a small molecule monolayer bound to the anode

Jing Guo, Norbert Koch, Steven L. Bernasek, Jeffrey Schwartz

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29 Scopus citations

Abstract

A monolayer of quarterthiophene-2-phosphonate (4TP) was chemically bound to the surface of indium tin oxide (ITO) and was then p-doped with the strong acceptor, tetrafluorotetracyanoquinodimethane (F₄-TCNQ). This interface modification strongly reduced the barrier for hole injection compared to unmodified ITO. This doped monolayer surface treatment was also superior to the commonly used anode coating poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid) (PEDOT:PPS) at driving voltages above 5.2 V.

Original language	English (US)
Pages (from-to)	370-373
Number of pages	4
Journal	Chemical Physics Letters
Volume	426
Issue number	4-6
DOIs	https://doi.org/10.1016/j.cplett.2006.05.129
State	Published - Aug 4 2006

All Science Journal Classification (ASJC) codes

General Physics and Astronomy
Physical and Theoretical Chemistry

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10.1016/j.cplett.2006.05.129

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@article{1a20be42c6de4124a842580d7232520f,

title = "Enhanced hole injection in a polymer light emitting diode using a small molecule monolayer bound to the anode",

abstract = "A monolayer of quarterthiophene-2-phosphonate (4TP) was chemically bound to the surface of indium tin oxide (ITO) and was then p-doped with the strong acceptor, tetrafluorotetracyanoquinodimethane (F4-TCNQ). This interface modification strongly reduced the barrier for hole injection compared to unmodified ITO. This doped monolayer surface treatment was also superior to the commonly used anode coating poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid) (PEDOT:PPS) at driving voltages above 5.2 V.",

author = "Jing Guo and Norbert Koch and Bernasek, {Steven L.} and Jeffrey Schwartz",

note = "Funding Information: The authors thank the National Science Foundation and CRG Chemical for support of this research. They also thank Mr. Manish Dubey for obtaining XP spectra and Dr. Joseph Palmer, Princeton Institute for the Science and Technology of Materials, Princeton University, for profilimetry measurements.",

year = "2006",

month = aug,

day = "4",

doi = "10.1016/j.cplett.2006.05.129",

language = "English (US)",

volume = "426",

pages = "370--373",

journal = "Chemical Physics Letters",

issn = "0009-2614",

publisher = "Elsevier B.V.",

number = "4-6",

}

TY - JOUR

T1 - Enhanced hole injection in a polymer light emitting diode using a small molecule monolayer bound to the anode

AU - Guo, Jing

AU - Koch, Norbert

AU - Bernasek, Steven L.

AU - Schwartz, Jeffrey

N1 - Funding Information: The authors thank the National Science Foundation and CRG Chemical for support of this research. They also thank Mr. Manish Dubey for obtaining XP spectra and Dr. Joseph Palmer, Princeton Institute for the Science and Technology of Materials, Princeton University, for profilimetry measurements.

PY - 2006/8/4

Y1 - 2006/8/4

N2 - A monolayer of quarterthiophene-2-phosphonate (4TP) was chemically bound to the surface of indium tin oxide (ITO) and was then p-doped with the strong acceptor, tetrafluorotetracyanoquinodimethane (F4-TCNQ). This interface modification strongly reduced the barrier for hole injection compared to unmodified ITO. This doped monolayer surface treatment was also superior to the commonly used anode coating poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid) (PEDOT:PPS) at driving voltages above 5.2 V.

AB - A monolayer of quarterthiophene-2-phosphonate (4TP) was chemically bound to the surface of indium tin oxide (ITO) and was then p-doped with the strong acceptor, tetrafluorotetracyanoquinodimethane (F4-TCNQ). This interface modification strongly reduced the barrier for hole injection compared to unmodified ITO. This doped monolayer surface treatment was also superior to the commonly used anode coating poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid) (PEDOT:PPS) at driving voltages above 5.2 V.

UR - http://www.scopus.com/inward/record.url?scp=33746089560&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33746089560&partnerID=8YFLogxK

U2 - 10.1016/j.cplett.2006.05.129

DO - 10.1016/j.cplett.2006.05.129

M3 - Article

AN - SCOPUS:33746089560

SN - 0009-2614

VL - 426

SP - 370

EP - 373

JO - Chemical Physics Letters

JF - Chemical Physics Letters

IS - 4-6

ER -

Enhanced hole injection in a polymer light emitting diode using a small molecule monolayer bound to the anode

Abstract

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