TY - JOUR
T1 - Enhanced hole injection in a polymer light emitting diode using a small molecule monolayer bound to the anode
AU - Guo, Jing
AU - Koch, Norbert
AU - Bernasek, Steven L.
AU - Schwartz, Jeffrey
N1 - Funding Information:
The authors thank the National Science Foundation and CRG Chemical for support of this research. They also thank Mr. Manish Dubey for obtaining XP spectra and Dr. Joseph Palmer, Princeton Institute for the Science and Technology of Materials, Princeton University, for profilimetry measurements.
PY - 2006/8/4
Y1 - 2006/8/4
N2 - A monolayer of quarterthiophene-2-phosphonate (4TP) was chemically bound to the surface of indium tin oxide (ITO) and was then p-doped with the strong acceptor, tetrafluorotetracyanoquinodimethane (F4-TCNQ). This interface modification strongly reduced the barrier for hole injection compared to unmodified ITO. This doped monolayer surface treatment was also superior to the commonly used anode coating poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid) (PEDOT:PPS) at driving voltages above 5.2 V.
AB - A monolayer of quarterthiophene-2-phosphonate (4TP) was chemically bound to the surface of indium tin oxide (ITO) and was then p-doped with the strong acceptor, tetrafluorotetracyanoquinodimethane (F4-TCNQ). This interface modification strongly reduced the barrier for hole injection compared to unmodified ITO. This doped monolayer surface treatment was also superior to the commonly used anode coating poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid) (PEDOT:PPS) at driving voltages above 5.2 V.
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U2 - 10.1016/j.cplett.2006.05.129
DO - 10.1016/j.cplett.2006.05.129
M3 - Article
AN - SCOPUS:33746089560
VL - 426
SP - 370
EP - 373
JO - Chemical Physics Letters
JF - Chemical Physics Letters
SN - 0009-2614
IS - 4-6
ER -