Abstract
A monolayer of quarterthiophene-2-phosphonate (4TP) was chemically bound to the surface of indium tin oxide (ITO) and was then p-doped with the strong acceptor, tetrafluorotetracyanoquinodimethane (F4-TCNQ). This interface modification strongly reduced the barrier for hole injection compared to unmodified ITO. This doped monolayer surface treatment was also superior to the commonly used anode coating poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid) (PEDOT:PPS) at driving voltages above 5.2 V.
Original language | English (US) |
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Pages (from-to) | 370-373 |
Number of pages | 4 |
Journal | Chemical Physics Letters |
Volume | 426 |
Issue number | 4-6 |
DOIs | |
State | Published - Aug 4 2006 |
All Science Journal Classification (ASJC) codes
- General Physics and Astronomy
- Physical and Theoretical Chemistry