Abstract
A monolayer of quarterthiophene-2-phosphonate (4TP) was chemically bound to the surface of indium tin oxide (ITO) and was then p-doped with the strong acceptor, tetrafluorotetracyanoquinodimethane (F4-TCNQ). This interface modification strongly reduced the barrier for hole injection compared to unmodified ITO. This doped monolayer surface treatment was also superior to the commonly used anode coating poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid) (PEDOT:PPS) at driving voltages above 5.2 V.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 370-373 |
| Number of pages | 4 |
| Journal | Chemical Physics Letters |
| Volume | 426 |
| Issue number | 4-6 |
| DOIs | |
| State | Published - Aug 4 2006 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
- Physical and Theoretical Chemistry
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Cite this
Guo, J., Koch, N., Bernasek, S. L., & Schwartz, J. (2006). Enhanced hole injection in a polymer light emitting diode using a small molecule monolayer bound to the anode. Chemical Physics Letters, 426(4-6), 370-373. https://doi.org/10.1016/j.cplett.2006.05.129